FDC3601N_RDS035L03-TB Introduction

The size of this internal resistance basically determines how much on-current the MOS tube chip can withstand (of course, it is related to other factors, such as thermal resistance). The resistance of this current path is called the internal resistance of the MOS tube, that is, the on-resistance. The smaller the internal resistance, the larger the current (because the heat is small).

MOS tubes like NCE80H12 convert the DC power in the battery into AC power when the electric vehicle is running normally, thereby driving the motor to run.

FDC3601N_RDS035L03-TB

IRF9910TRPBF

NCE30H11K NCE3402B NCE30H10AK NCE2304 NCE3404.

There is parasitic capacitance between the three pins of the MOS tube, which is not what we need, but is caused by the limitation of the manufacturing process.

NCE2025I NCE2025S NCE2030K NCE2030U NCE2030.

Felix Zandman wrote in his memoir, "Many people think the name sounds odd, but for me, every time I hear it, I think of my grandmother and the power she gave me and others. , think of those Jewish communities in Eastern Europe that were forever erased. Why did Felix Zandman name his company Vishay? Because his grandmother was born in Vishay, the name of a small Lithuanian village in honor of family members killed in the Holocaust ." .

FDC3601N_RDS035L03-TB

AO4882

The parasitic capacitance structure of the MOS tube is as follows. Among them, the width of polysilicon, the width of the channel and the trench, the thickness of the G oxide layer, and the doping profile of the PN junction are all factors that affect the parasitic capacitance. .

NCE6802 NCE30H29D NCEB301Q NCEB301Q NCEB301G.

MOSFET is a type of FET (the other is JFET), which can be made into enhancement mode or depletion mode, P-channel or N-channel, a total of 4 types, but only the enhancement-mode N-channel MOS is actually used. Tube model and enhanced P-channel MOS tube model, so NMOS is usually mentioned, or PMOS refers to these two.

The full area (UDS>UGS-UT) guarded in the above three areas is the full area, also known as the constant current area or the amplification area. Power MOSFETs are used in power conversions such as switching power supplies and inverters, and they work in two regions, the cut-off region and the breakdown region. . The breakdown region is in the region of considerable drain-source voltage UDS, and the drain current is approximately constant. When the UDS increases to a certain value, the drain PN junction breaks down, the leakage current increases rapidly, and the curve turns upward and enters the breakdown region.

FDC3601N_RDS035L03-TB

In the lithium battery protection board, the most important thing is to protect the chip and MOS tube.

NCE8205B NCE8205 NCE8205i NCE8205E NCE9926.

relevant information

BYN41020A can replace FAIRCHILD/FDC3601N