AP50T10GM-HF_RF1K49088 Introduction

MOS tubes like NCE80H12 convert the DC power in the battery into AC power when the electric vehicle is running normally, thereby driving the motor to run.

A few days ago, Vishay Intertechnology, Inc. announced that it has expanded its TNPU e3 series of automotive-grade high-precision thin-film flat chip resistors with new devices with a temperature coefficient (TCR) as low as 2 ppm/K, in 0603, 0805 and 1206 form factors.

AP50T10GM-HF_RF1K49088

4228SS

Figure four types of MOSFETs and their graphical symbols. . Power MOSFETs are generally rarely used in P-channel. Since the mobility of holes is lower than that of electrons, the on-resistance of P-channel transistors is larger than that of N-channel transistors for the same channel size. According to the two points of the conductive channel and the process of channel formation, MOS tubes can be divided into: P-channel enhancement MOS tubes, P-channel depletion MOS tubes, N-channel enhancement MOS tubes and N-channel depletion MOS tubes .

NCE30H11K NCE3402B NCE30H10AK NCE2304 NCE3404.

As for why not to use depletion-type MOS tubes, it is not recommended to get to the bottom of it. . For these two enhanced MOS tubes, NMOS is more commonly used.

NCE2025I NCE2025S NCE2030K NCE2030U NCE2030.

AP50T10GM-HF_RF1K49088

SSM9975GM

The parasitic capacitance structure of the MOS tube is as follows. Among them, the width of polysilicon, the width of the channel and the trench, the thickness of the G oxide layer, and the doping profile of the PN junction are all factors that affect the parasitic capacitance. .

MOSFET is a type of FET (the other is JFET), which can be made into enhancement mode or depletion mode, P-channel or N-channel, a total of 4 types, but only the enhancement-mode N-channel MOS is actually used. Tube model and enhanced P-channel MOS tube model, so NMOS is usually mentioned, or PMOS refers to these two.

In order to avoid the problems of too small current-carrying capacity and large on-resistance of MOSFET, two techniques are generally used in high-power MOSFETs. One is to connect millions of low-power MOSFET unit cells in parallel to improve the current-carrying capacity of MOSFET. . Another technique is to intermittently improve the structure of the MOSFET and use a straight V-groove structure. FIG. 3 is a cross-sectional view of the structure of a V-channel MOSFET.

NCE3020K NCE3025Q NCE3035K NCE3025G NCE3030K.

AP50T10GM-HF_RF1K49088

NCE25TD135LT NCE15TD135LT NCE15TD120LP NCE15TD135LP NCE25TD120LP.

The battery cell is equivalent to the heart of the lithium battery, and the lithium battery protection board is mainly composed of a protection chip (or management chip), a MOS tube, a resistor, a capacitor, and a PCB board.

relevant information

BYM41019A can replace AP50T10GM-HF of APEC/Fuding