FW257-TL-E_RK4936 Introduction

The power mos used on electric vehicles is a three-dimensional structure. The mos tube we have seen is actually composed of thousands of small mos tubes in parallel. You may think that one or a few bad moss should easily appear in thousands of small mos. In fact, it is not that easy. , the current manufacturing process basically guarantees the high consistency of various parameters of these small units. Low-power mos is a planar structure.

In addition to the above-mentioned NCE80H12 suitable for electric vehicle controllers, Nanshan Electronics also provides Fenghua resistance-capacitance sense, long-crystal MOS transistors, Epson active and passive crystal oscillators, etc.

FW257-TL-E_RK4936

AFN4936SS8RG

As for why not to use depletion-type MOS tubes, it is not recommended to get to the bottom of it. . For these two enhanced MOS tubes, NMOS is more commonly used.

Felix Zandman wrote in his memoir, "Many people think the name sounds odd, but for me, every time I hear it, I think of my grandmother and the power she gave me and others. , think of those Jewish communities in Eastern Europe that were forever erased. Why did Felix Zandman name his company Vishay? Because his grandmother was born in Vishay, the name of a small Lithuanian village in honor of family members killed in the Holocaust ." .

There are three parasitic capacitance parameters in the MOS tube specification, namely: input capacitance Ciss, output capacitance Coss, and reverse transfer capacitance Crss. What do the three capacitance parameters represent in the body of the tube? How did it form? .

There is parasitic capacitance between the three pins of the MOS tube, which is not what we need, but is caused by the limitation of the manufacturing process.

FW257-TL-E_RK4936

AP9960GM

Variable resistance region (UDS In this region, when UDS increases, ID increases linearly. Cut-off region (UGS). When the conductive channel is close to the pinch off, the growth slows down. Figure MOS tube drain output characteristics of field effect transistors The output characteristics can be divided into four areas: variable resistance area, cut-off area, breakdown area and constant current area. When the low UDS separate pinch-off voltage is large, the MOS tube is equivalent to a resistance, and this resistance increases with the increase of UGS and decrease.

When the applied forward voltage increases, the concentration of unbalanced minority carriers increases and the concentration gradient also increases, and when the applied voltage decreases, the change is opposite. The process of charge accumulation and release in this phenomenon is the same as that of capacitor charging and discharging, which is called diffusion capacitance. Diffusion capacitance: When a forward voltage is applied, the non-equilibrium minority carrier concentration near the interface of the depletion layer is high, far from the non-equilibrium minority carrier concentration is low, and the concentration gradually decays from high to 0 until it reaches zero.

NCE3008M NCE3010S NCE3011E NCE30D0808J NCE3018AS.

NCE2060K NCE2090K NCE20H11K NCE20H18 NCE20H20.

FW257-TL-E_RK4936

NCE30TD120UT NCE40TD120UT NCE40TD120VT NCE30TD120BP NCE25TD120BT.

. MOS tube NCE3401 is a -30V drain-source voltage, 4.2A current, P-channel MOS tube in SOT-23 package.

relevant information

BYM41019A can replace SANYO/Sanyo's FW257-TL-E