HAT2035R_RK4936TB Guide

Their success today is due to the founders. When naming the company, the founders incorporated their nostalgia for the past and expectations for the future. A simple name with many untold stories behind it... . There are many well-known brands in the electronics industry, each brand is like a person's name, and its origin and naming have its own unique style.

A few days ago, Vishay Intertechnology, Inc. announced that it has expanded its TNPU e3 series of automotive-grade high-precision thin-film flat chip resistors with new devices with a temperature coefficient (TCR) as low as 2 ppm/K, in 0603, 0805 and 1206 form factors.

HAT2035R_RK4936TB

SSM9928O

NCE3019AS NCE3045G NCE3400AY NCE30ND07S NCE8601B.

NCE30H11K NCE3402B NCE30H10AK NCE2304 NCE3404.

Felix Zandman experienced the Holocaust, lost loved ones, and lived in the dark underground for 17 months in the haze of death. The component industry and even the history of technological development have left a strong legacy. Today the physics book written by Dr. Felix Zandman is used as a basic textbook in many universities, and his autobiography has been translated into Chinese and many other languages. . In 2004 Fortune Magazine selected Vishay as one of America's more admired companies.

NCE3404Y NCE3400A NCE3400 NCE30ND07AS NCE3008N.

HAT2035R_RK4936TB

2N7002DW-7-F

NCE3020K NCE3025Q NCE3035K NCE3025G NCE3030K.

Variable resistance region (UDS In this region, when UDS increases, ID increases linearly. Cut-off region (UGS). When the conductive channel is close to the pinch off, the growth slows down. Figure MOS tube drain output characteristics of field effect transistors The output characteristics can be divided into four areas: variable resistance area, cut-off area, breakdown area and constant current area. When the low UDS separate pinch-off voltage is large, the MOS tube is equivalent to a resistance, and this resistance increases with the increase of UGS and decrease.

The parasitic capacitance structure of the MOS tube is as follows. Among them, the width of polysilicon, the width of the channel and the trench, the thickness of the G oxide layer, and the doping profile of the PN junction are all factors that affect the parasitic capacitance. .

NCE2060K NCE2090K NCE20H11K NCE20H18 NCE20H20.

HAT2035R_RK4936TB

The main functions of the lithium battery protection board are: 1 overcharge protection, 2 short circuit protection, 3 over current protection, 4 over discharge protection, 5 normal state.

The functions of the MOS tube in the protection board are: 1. Detect overcharge, 2. Detect over-discharge, 3. Detect over-current during charging, 4. Detect over-current during discharge, 5. Detect over-current during short circuit.

relevant information

BYM41019A can replace HAT2035R of NEC/RENESAS/Renesas