7B34-04-1_AD1886AJST Introduction

. With the maturity and progress of the process technology and the increase in market demand, more and more companies use advanced processes below 20nm to design and produce ICs and devices, which makes more and more IDMs and foundries eliminate low-efficiency production. fab.

In April 2019, Diodes completed the acquisition of Texas Instruments' 150mm/200mm wafer fab (GFAB) in Greenock, Scotland, UK, as part of TI's strategy to gradually abandon outdated capacity. Texas Instruments currently has 15 wafer fabs in 9 countries, of course, these plants include outdated capacity that is about to close, as well as new 300mm capacity.

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In addition to these features, the C2000 F2838x microcontrollers offer enhanced real-time control performance and greater flexibility than previous generation C2000 series microcontrollers. For more information on the F2838x family of microcontrollers, .

Flexible VIN broadens application range: The TPS62840 has a wide input voltage range of 1.8VIN-6.5VIN and accepts a variety of chemistries and configurations, such as two lithium-manganese dioxide (2s-LiMnO2) cells in series , single-cell lithium thionyl chloride (1xLiSOCL2) batteries, four- and two-cell alkaline batteries, and lithium polymer batteries (Li-Po).

So, does this mean that 150mm wafers are gradually withdrawing from the stage of history? The answer is no, there is still a huge market space for 150mm wafers. A large number of 150mm fabs in the industry were closed, and more and more 300mm fabs were launched and gradually achieved mass production.

In addition, Solis says, "using a BAW resonator is more accurate than using a quartz crystal." Quartz crystals require additional components to extend their accuracy -- over time -- as their performance changes beyond controllable temperature changes, he adds Say.

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The technology, which also enables high-precision and robust communication between IoT devices, can now be developed in a less bulky form, said Kim Wong, vice president of high-speed data and clocking at TI.

TPS630701RNMT TPS630702RNMR TPS54218RTER TPS92692PWPR TPS56C230RJER.

In short, advances in BAW technology have brought "higher performance, simpler design, lower cost and smaller size" to wired and wireless networks, Wong explained.

"The new BAW resonator technology is important because TI is integrating it into its silicon products, reducing design time, solution size and component cost," said Philip Solis, research director for connectivity and smartphone semiconductors at IDC.

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However, the thin film structure needs to be strong enough to be unaffected by subsequent processes. Compared with BAW-SMR, a smaller part of the membrane type is in contact with the underlying substrate, which is not easy to dissipate heat.

The working principle is as shown below. The typical basic structure is shown in the figure (a) above, with the piezoelectric layer sandwiched between the upper and lower metal electrodes, the corresponding mBVD equivalent circuit is shown in the figure (b) above, and the corresponding impedance is shown in the figure (c) above. It can be seen that there are two resonance frequencies, series (fs) and parallel (fp).

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