AM5922N-T1-PF_AM4910N-T1-PF Introduction

Today I will introduce to you a domestic FET that is suitable for lithium battery protection boards and can replace MOS tubes such as AO3401: NCE3401.

A few days ago, Vishay Intertechnology, Inc. announced that it has expanded its TNPU e3 series of automotive-grade high-precision thin-film flat chip resistors with new devices with a temperature coefficient (TCR) as low as 2 ppm/K, in 0603, 0805 and 1206 form factors.

AM5922N-T1-PF_AM4910N-T1-PF

APM7313KC-TRL

NCE2025I NCE2025S NCE2030K NCE2030U NCE2030.

There is parasitic capacitance between the three pins of the MOS tube, which is not what we need, but is caused by the limitation of the manufacturing process.

NCE3019AS NCE3045G NCE3400AY NCE30ND07S NCE8601B.

Barrier capacitance: In power semiconductors, when the N-type and P-type semiconductors are combined, the electrons of the N-type semiconductor will partially diffuse into the holes of the P-type semiconductor due to the concentration difference, so they will form on both sides of the junction surface. Space charge area (the electric field formed by the space charge area will resist the diffusion movement, and finally make the diffusion movement reach equilibrium);

AM5922N-T1-PF_AM4910N-T1-PF

RK4936

NCE2060K NCE2090K NCE20H11K NCE20H18 NCE20H20.

MOSFET is a type of FET (the other is JFET), which can be made into enhancement mode or depletion mode, P-channel or N-channel, a total of 4 types, but only the enhancement-mode N-channel MOS is actually used. Tube model and enhanced P-channel MOS tube model, so NMOS is usually mentioned, or PMOS refers to these two.

The full area (UDS>UGS-UT) guarded in the above three areas is the full area, also known as the constant current area or the amplification area. Power MOSFETs are used in power conversions such as switching power supplies and inverters, and they work in two regions, the cut-off region and the breakdown region. . The breakdown region is in the region of considerable drain-source voltage UDS, and the drain current is approximately constant. When the UDS increases to a certain value, the drain PN junction breaks down, the leakage current increases rapidly, and the curve turns upward and enters the breakdown region.

The transfer characteristic refers to the relationship curve between the gate voltage UGS and the corresponding drain current ID when the voltage UDS between the drain and the source is at a certain fixed value. Figure 3 shows the handling characteristics of a certain FET. . The characteristics of a MOSFET can be characterized by a transfer characteristic curve and a drain output characteristic curve.

AM5922N-T1-PF_AM4910N-T1-PF

The battery cell is equivalent to the heart of the lithium battery, and the lithium battery protection board is mainly composed of a protection chip (or management chip), a MOS tube, a resistor, a capacitor, and a PCB board.

NCE25TD120WT NCE25TD120VT NCE15TD120LT NCE25TD120LT NCE40TD135LT.

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