ECH8602M_AO4818 Introduction

According to the carrier of the conduction channel, it can be divided into N channel and P channel. Assuming that the carriers of the conductive channel are electrons, it is called an N-channel; assuming that the carriers are holes, it is called a P-channel. A MOS tube is a semiconductor device in which unipolar carriers participate in conduction.

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ECH8602M_AO4818

AO9926C

The reason is that the on-resistance is small and it is easy to manufacture. Therefore, in the application of switching power supply and motor drive, NMOS is generally used.

NCE2025I NCE2025S NCE2030K NCE2030U NCE2030.

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Figure four types of MOSFETs and their graphical symbols. . Power MOSFETs are generally rarely used in P-channel. Since the mobility of holes is lower than that of electrons, the on-resistance of P-channel transistors is larger than that of N-channel transistors for the same channel size. According to the two points of the conductive channel and the process of channel formation, MOS tubes can be divided into: P-channel enhancement MOS tubes, P-channel depletion MOS tubes, N-channel enhancement MOS tubes and N-channel depletion MOS tubes .

ECH8602M_AO4818

AFN4946S8RG

On the one hand, the three electrodes of the low-power MOSFET are on one plane, the channel cannot be made very short, and the channel resistance is large. The structure of the MOSFET shown in the figure is not suitable for use in high-power applications for two reasons. On the other hand, the conductive channel is composed of surface induced charges, and the channel current is the surface current. To increase the current capacity, it is necessary to increase the chip area. Such a structure is unlikely to achieve a large current. .

NCE3075Q NCE3015S NCE3400E NCE3065K NCE3095AK.

The N-channel enhancement mode MOS transistor uses a low-doped P-type semiconductor as the substrate, and forms two heavily doped N+ regions on the substrate by a dispersed method, and then generates a very thin one on the P-type semiconductor. A silicon dioxide insulating layer, and then photolithography is used to etch away the silicon dioxide layer on the upper end of the two heavily doped N+ regions, exposing the N+ regions, and finally on the outer surface of the two N+ regions and the two between them. The surface of silicon oxide is sprayed with a layer of metal film by evaporation or sputtering. These three metal films constitute the three electrodes of the MOS tube, which are called source (S), gate (G) and drain (D) respectively. .

NCE3020K NCE3025Q NCE3035K NCE3025G NCE3030K.

ECH8602M_AO4818

NCE30TD120UT NCE40TD120UT NCE40TD120VT NCE30TD120BP NCE25TD120BT.

NCE2302C NCE8205t NCE2004Y NCE2006Y NCE2007NS.

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