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2022-09-23 18:12:25
Shenzhen Yichuanghui Electronics supplies TPS63700DRCR
Manufacturer: Infineon
Product Category:MOSFET
RoHS: Details
Technology: Si
Installation style: Through Hole
Package/Case:TO-220-3
Transistor Polarity: N-Channel
Number of channels: 1 Channel
Vds-drain-source breakdown voltage: 200 V
Id-Continuous Drain Current: 44 A
Rds On-drain-source on-resistance: 54 mOhms
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Vgs th - gate-source threshold voltage: 1.8 V
Qg-gate charge: 91 nC
Minimum operating temperature:- 55 C
Maximum operating temperature: + 175 C
Pd - Power Dissipation: 3.8 W
Channel Mode:Enhancement
Package:Tube
Trademark: Infineon / IR
Configuration:Single
Fall Time: 47 ns
Forward Transconductance - Min: 17 S
Height: 15.65 mm
Length: 10mm
Product Type:MOSFET
Rise time: 95 ns
Factory Packing Quantity: 50
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical turn-off delay time: 29 ns
Typical turn-on delay time: 16 ns
Width: 4.4 mm
Part number alias: IRFB38N20DPBF SP001556010
Unit weight: 2 g