MCH6662_SUF1002 Introduction

A few days ago, Vishay Intertechnology, Inc. announced that it has expanded its TNPU e3 series of automotive-grade high-precision thin-film flat chip resistors with new devices with a temperature coefficient (TCR) as low as 2 ppm/K, in 0603, 0805 and 1206 form factors.

The above is the specification of the power mos tube NCE80H12. The power mos tube NCE80H12 used in our electric vehicle controller is actually different from the low-power mos structure in the usual cmos integrated circuit.

MCH6662_SUF1002

APM9926KC-TRL

NCE3404Y NCE3400A NCE3400 NCE30ND07AS NCE3008N.

Felix Zandman experienced the Holocaust, lost loved ones, and lived in the dark underground for 17 months in the haze of death. The component industry and even the history of technological development have left a strong legacy. Today the physics book written by Dr. Felix Zandman is used as a basic textbook in many universities, and his autobiography has been translated into Chinese and many other languages. . In 2004 Fortune Magazine selected Vishay as one of America's more admired companies.

MOS tube 3306 product features 1. RDS(on)=7mΩ@VGS=10V 2. Lead-free green equipment 3. Low resistance switch to reduce conduction loss 4. High avalanche current.

NCE3019AS NCE3045G NCE3400AY NCE30ND07S NCE8601B.

MCH6662_SUF1002

TPC8210

NCE2060K NCE2090K NCE20H11K NCE20H18 NCE20H20.

NCE4612SP NCE30H32VD NCE3402 NCE3402A NCE30H21.

The full area (UDS>UGS-UT) guarded in the above three areas is the full area, also known as the constant current area or the amplification area. Power MOSFETs are used in power conversions such as switching power supplies and inverters, and they work in two regions, the cut-off region and the breakdown region. . The breakdown region is in the region of considerable drain-source voltage UDS, and the drain current is approximately constant. When the UDS increases to a certain value, the drain PN junction breaks down, the leakage current increases rapidly, and the curve turns upward and enters the breakdown region.

The parasitic capacitance structure of the MOS tube is as follows. Among them, the width of polysilicon, the width of the channel and the trench, the thickness of the G oxide layer, and the doping profile of the PN junction are all factors that affect the parasitic capacitance. .

MCH6662_SUF1002

NCE2302C NCE8205t NCE2004Y NCE2006Y NCE2007NS.

NCE2302D NCE2302F NCE1012E NCE2302B NCE2302.

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