ECH8653_AO4818B Introduction

In response to this demand, Xinjie can produce N-channel trench process MOS transistors with small internal resistance and good overcurrent resistance - NCE80H12, the on-resistance of NCE80H12 is less than 6mΩ, the output current can reach 120A, and the motor torque is better , .

According to the carrier of the conduction channel, it can be divided into N channel and P channel. Assuming that the carriers of the conductive channel are electrons, it is called an N-channel; assuming that the carriers are holes, it is called a P-channel. A MOS tube is a semiconductor device in which unipolar carriers participate in conduction.

ECH8653_AO4818B

SI6926DQ-T1-GE3

The reason is that the on-resistance is small and it is easy to manufacture. Therefore, in the application of switching power supply and motor drive, NMOS is generally used.

NCE3019AS NCE3045G NCE3400AY NCE30ND07S NCE8601B.

After the war, Zandman immigrated to France, earning degrees in Mechanical Engineering, Applied Mechanics and General Physics, and a Ph.D. in Mechanical Physics at the Sorbonne University in Paris. It can be said that what Zandman learned during those darker days laid the groundwork for him to start Vishay. For 17 months without the light of day, Zandman's uncle taught him algebra, trigonometry, geometry and physics. . Zandman was born in Poland in 1928. During the Nazi Holocaust in World War II, Zandman was taken in by an old housekeeper whom Zandman's grandmother had rescued. He and four others hid under the housekeeper's floor for 17 months before they were able to escape the Holocaust. . In 1956, Zandman immigrated to the United States and founded Vishay in 1962.

Figure four types of MOSFETs and their graphical symbols. . Power MOSFETs are generally rarely used in P-channel. Since the mobility of holes is lower than that of electrons, the on-resistance of P-channel transistors is larger than that of N-channel transistors for the same channel size. According to the two points of the conductive channel and the process of channel formation, MOS tubes can be divided into: P-channel enhancement MOS tubes, P-channel depletion MOS tubes, N-channel enhancement MOS tubes and N-channel depletion MOS tubes .

ECH8653_AO4818B

QS6K21TR

NCE4612SP NCE30H32VD NCE3402 NCE3402A NCE30H21.

The transfer characteristic refers to the relationship curve between the gate voltage UGS and the corresponding drain current ID when the voltage UDS between the drain and the source is at a certain fixed value. Figure 3 shows the handling characteristics of a certain FET. . The characteristics of a MOSFET can be characterized by a transfer characteristic curve and a drain output characteristic curve.

NCE2060K NCE2090K NCE20H11K NCE20H18 NCE20H20.

MOSFET is a type of FET (the other is JFET), which can be made into enhancement mode or depletion mode, P-channel or N-channel, a total of 4 types, but only the enhancement-mode N-channel MOS is actually used. Tube model and enhanced P-channel MOS tube model, so NMOS is usually mentioned, or PMOS refers to these two.

ECH8653_AO4818B

The main functions of the lithium battery protection board are: 1 overcharge protection, 2 short circuit protection, 3 over current protection, 4 over discharge protection, 5 normal state.

The functions of the MOS tube in the protection board are: 1. Detect overcharge, 2. Detect over-discharge, 3. Detect over-current during charging, 4. Detect over-current during discharge, 5. Detect over-current during short circuit.

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