MC3835_AO4842 Introduction

The power mos used on electric vehicles is a three-dimensional structure. The mos tube we have seen is actually composed of thousands of small mos tubes in parallel. You may think that one or a few bad moss should easily appear in thousands of small mos. In fact, it is not that easy. , the current manufacturing process basically guarantees the high consistency of various parameters of these small units. Low-power mos is a planar structure.

A few days ago, Vishay Intertechnology, Inc. announced that it has expanded its TNPU e3 series of automotive-grade high-precision thin-film flat chip resistors with new devices with a temperature coefficient (TCR) as low as 2 ppm/K, in 0603, 0805 and 1206 form factors.

MC3835_AO4842

8205A TSSOP8

Felix Zandman experienced the Holocaust, lost loved ones, and lived in the dark underground for 17 months in the haze of death. The component industry and even the history of technological development have left a strong legacy. Today the physics book written by Dr. Felix Zandman is used as a basic textbook in many universities, and his autobiography has been translated into Chinese and many other languages. . In 2004 Fortune Magazine selected Vishay as one of America's more admired companies.

After the war, Zandman immigrated to France, earning degrees in Mechanical Engineering, Applied Mechanics and General Physics, and a Ph.D. in Mechanical Physics at the Sorbonne University in Paris. It can be said that what Zandman learned during those darker days laid the groundwork for him to start Vishay. For 17 months without the light of day, Zandman's uncle taught him algebra, trigonometry, geometry and physics. . Zandman was born in Poland in 1928. During the Nazi Holocaust in World War II, Zandman was taken in by an old housekeeper whom Zandman's grandmother had rescued. He and four others hid under the housekeeper's floor for 17 months before they were able to escape the Holocaust. . In 1956, Zandman immigrated to the United States and founded Vishay in 1962.

. The conductive channel of the MOS tube can be formed during the production process or by turning on an external power supply. When the gate voltage is equal to zero, there is a channel (that is, formed during production), which is called depletion mode. When an external voltage is applied The one that forms the channel later is called the enhancement type.

Figure four types of MOSFETs and their graphical symbols. . Power MOSFETs are generally rarely used in P-channel. Since the mobility of holes is lower than that of electrons, the on-resistance of P-channel transistors is larger than that of N-channel transistors for the same channel size. According to the two points of the conductive channel and the process of channel formation, MOS tubes can be divided into: P-channel enhancement MOS tubes, P-channel depletion MOS tubes, N-channel enhancement MOS tubes and N-channel depletion MOS tubes .

MC3835_AO4842

AFN4906S8RG

NCE3020K NCE3025Q NCE3035K NCE3025G NCE3030K.

. For example, electronic fuel injection system, anti-lock brake control, anti-skid control, traction control, electronically controlled suspension, electronically controlled automatic transmission, electronic power steering, etc. The electronic device that can be used independently in the environment has no direct relationship with the performance of the car itself.

In order to avoid the problems of too small current-carrying capacity and large on-resistance of MOSFET, two techniques are generally used in high-power MOSFETs. One is to connect millions of low-power MOSFET unit cells in parallel to improve the current-carrying capacity of MOSFET. . Another technique is to intermittently improve the structure of the MOSFET and use a straight V-groove structure. FIG. 3 is a cross-sectional view of the structure of a V-channel MOSFET.

MOSFET is a type of FET (the other is JFET), which can be made into enhancement mode or depletion mode, P-channel or N-channel, a total of 4 types, but only the enhancement-mode N-channel MOS is actually used. Tube model and enhanced P-channel MOS tube model, so NMOS is usually mentioned, or PMOS refers to these two.

MC3835_AO4842

. MOS tube NCE3401 is a -30V drain-source voltage, 4.2A current, P-channel MOS tube in SOT-23 package.

The main functions of the lithium battery protection board are: 1 overcharge protection, 2 short circuit protection, 3 over current protection, 4 over discharge protection, 5 normal state.

relevant information