NTHD4502NT1G_AO4854 Introduction

Although high-resolution technology is only just getting started in the audio market, its evolution is already underway. . VentureCraft is a pioneering company in this area, leading the development of high-resolution portable amplifiers, music players and headphone amplifiers, including the popular SounDroid Vantam product line.

The power mos used on electric vehicles is a three-dimensional structure. The mos tube we have seen is actually composed of thousands of small mos tubes in parallel. You may think that one or a few bad moss should easily appear in thousands of small mos. In fact, it is not that easy. , the current manufacturing process basically guarantees the high consistency of various parameters of these small units. Low-power mos is a planar structure.

NTHD4502NT1G_AO4854

DMN2040LSD-13

As for why not to use depletion-type MOS tubes, it is not recommended to get to the bottom of it. . For these two enhanced MOS tubes, NMOS is more commonly used.

MOS tube 3306 product features 1. RDS(on)=7mΩ@VGS=10V 2. Lead-free green equipment 3. Low resistance switch to reduce conduction loss 4. High avalanche current.

There is parasitic capacitance between the three pins of the MOS tube, which is not what we need, but is caused by the limitation of the manufacturing process.

Working principle of power MOS tube Power MOS tube is developed from low-power MOS tube. However, in terms of structure, there is a big difference between them. In order to better understand the mechanism of power MOSFET, we must first recall the mechanism of low-power FET. The following describes the principle of the MOS transistor with the structure of an N-channel enhancement type low-power MOSFET. .

NTHD4502NT1G_AO4854

TPC8224-H

NCE6802 NCE30H29D NCEB301Q NCEB301Q NCEB301G.

NCE3075Q NCE3015S NCE3400E NCE3065K NCE3095AK.

NCE3008M NCE3010S NCE3011E NCE30D0808J NCE3018AS.

In order to avoid the problems of too small current-carrying capacity and large on-resistance of MOSFET, two techniques are generally used in high-power MOSFETs. One is to connect millions of low-power MOSFET unit cells in parallel to improve the current-carrying capacity of MOSFET. . Another technique is to intermittently improve the structure of the MOSFET and use a straight V-groove structure. FIG. 3 is a cross-sectional view of the structure of a V-channel MOSFET.

NTHD4502NT1G_AO4854

The performance parameters of NCE3401 are still good, suitable for load switching or pulse width modulation applications, and the impedance value is relatively low, and the new clean energy MOS tube has the characteristic process technology of shielded gate power and super junction power MOSFET. The parameter performance and sample delivery performance can be almost the same as foreign MOS tubes, such as the same used in lithium battery protection boards, NCE3401, AO3401, IRLML5203TR, DMP3098L-7, I think the functions can be satisfied in comparison, and the price is moderate NCE3401 is more suitable.

NCE30TD120UT NCE40TD120UT NCE40TD120VT NCE30TD120BP NCE25TD120BT.

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