SI5902DC-T1-GE3_AP4224GM Introduction

In response to this demand, Xinjie can produce N-channel trench process MOS transistors with small internal resistance and good overcurrent resistance - NCE80H12, the on-resistance of NCE80H12 is less than 6mΩ, the output current can reach 120A, and the motor torque is better , .

In addition to the above-mentioned NCE80H12 suitable for electric vehicle controllers, Nanshan Electronics also provides Fenghua resistance-capacitance sense, long-crystal MOS transistors, Epson active and passive crystal oscillators, etc.

SI5902DC-T1-GE3_AP4224GM

SSM9926-A

NCE3019AS NCE3045G NCE3400AY NCE30ND07S NCE8601B.

After the war, Zandman immigrated to France, earning degrees in Mechanical Engineering, Applied Mechanics and General Physics, and a Ph.D. in Mechanical Physics at the Sorbonne University in Paris. It can be said that what Zandman learned during those darker days laid the groundwork for him to start Vishay. For 17 months without the light of day, Zandman's uncle taught him algebra, trigonometry, geometry and physics. . Zandman was born in Poland in 1928. During the Nazi Holocaust in World War II, Zandman was taken in by an old housekeeper whom Zandman's grandmother had rescued. He and four others hid under the housekeeper's floor for 17 months before they were able to escape the Holocaust. . In 1956, Zandman immigrated to the United States and founded Vishay in 1962.

Figure four types of MOSFETs and their graphical symbols. . Power MOSFETs are generally rarely used in P-channel. Since the mobility of holes is lower than that of electrons, the on-resistance of P-channel transistors is larger than that of N-channel transistors for the same channel size. According to the two points of the conductive channel and the process of channel formation, MOS tubes can be divided into: P-channel enhancement MOS tubes, P-channel depletion MOS tubes, N-channel enhancement MOS tubes and N-channel depletion MOS tubes .

There are three parasitic capacitance parameters in the MOS tube specification, namely: input capacitance Ciss, output capacitance Coss, and reverse transfer capacitance Crss. What do the three capacitance parameters represent in the body of the tube? How did it form? .

SI5902DC-T1-GE3_AP4224GM

AP9962AGM-HF

NCE3020K NCE3025Q NCE3035K NCE3025G NCE3030K.

On the one hand, the three electrodes of the low-power MOSFET are on one plane, the channel cannot be made very short, and the channel resistance is large. The structure of the MOSFET shown in the figure is not suitable for use in high-power applications for two reasons. On the other hand, the conductive channel is composed of surface induced charges, and the channel current is the surface current. To increase the current capacity, it is necessary to increase the chip area. Such a structure is unlikely to achieve a large current. .

NCE2060K NCE2090K NCE20H11K NCE20H18 NCE20H20.

NCE6802 NCE30H29D NCEB301Q NCEB301Q NCEB301G.

SI5902DC-T1-GE3_AP4224GM

The main functions of the lithium battery protection board are: 1 overcharge protection, 2 short circuit protection, 3 over current protection, 4 over discharge protection, 5 normal state.

The battery cell is equivalent to the heart of the lithium battery, and the lithium battery protection board is mainly composed of a protection chip (or management chip), a MOS tube, a resistor, a capacitor, and a PCB board.

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