Si5904DC-T1-GE3_AP4224M Introduction

The size of this internal resistance basically determines how much on-current the MOS tube chip can withstand (of course, it is related to other factors, such as thermal resistance). The resistance of this current path is called the internal resistance of the MOS tube, that is, the on-resistance. The smaller the internal resistance, the larger the current (because the heat is small).

In addition to the above-mentioned NCE80H12 suitable for electric vehicle controllers, Nanshan Electronics also provides Fenghua resistance-capacitance sense, long-crystal MOS transistors, Epson active and passive crystal oscillators, etc.

Si5904DC-T1-GE3_AP4224M

UM9926

After the war, Zandman immigrated to France, earning degrees in Mechanical Engineering, Applied Mechanics and General Physics, and a Ph.D. in Mechanical Physics at the Sorbonne University in Paris. It can be said that what Zandman learned during those darker days laid the groundwork for him to start Vishay. For 17 months without the light of day, Zandman's uncle taught him algebra, trigonometry, geometry and physics. . Zandman was born in Poland in 1928. During the Nazi Holocaust in World War II, Zandman was taken in by an old housekeeper whom Zandman's grandmother had rescued. He and four others hid under the housekeeper's floor for 17 months before they were able to escape the Holocaust. . In 1956, Zandman immigrated to the United States and founded Vishay in 1962.

There are three parasitic capacitance parameters in the MOS tube specification, namely: input capacitance Ciss, output capacitance Coss, and reverse transfer capacitance Crss. What do the three capacitance parameters represent in the body of the tube? How did it form? .

NCE30H11K NCE3402B NCE30H10AK NCE2304 NCE3404.

The reason is that the on-resistance is small and it is easy to manufacture. Therefore, in the application of switching power supply and motor drive, NMOS is generally used.

Si5904DC-T1-GE3_AP4224M

SI4622DY-T1-E3

In order to avoid the problems of too small current-carrying capacity and large on-resistance of MOSFET, two techniques are generally used in high-power MOSFETs. One is to connect millions of low-power MOSFET unit cells in parallel to improve the current-carrying capacity of MOSFET. . Another technique is to intermittently improve the structure of the MOSFET and use a straight V-groove structure. FIG. 3 is a cross-sectional view of the structure of a V-channel MOSFET.

Variable Resistor Zone (UDS

Within this region, ID increases linearly as UDS increases. Cut-off area (UGS). Growth slows as the conduction channel approaches pinch off. Figure 1. Drain output characteristics of MOS transistors The output characteristics of field effect transistors can be divided into four regions: variable resistance region, cut-off region, breakdown region and constant current region. When the low UDS separate pinch off voltage is large, the MOS tube is equivalent to a resistance, and this resistance decreases with the increase of UGS.

NCE3020K NCE3025Q NCE3035K NCE3025G NCE3030K.

NCE3008M NCE3010S NCE3011E NCE30D0808J NCE3018AS

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Si5904DC-T1-GE3_AP4224M

The lithium battery of electric vehicles can work normally, largely thanks to the lithium battery protection board.

NCE25TD120WT NCE25TD120VT NCE15TD120LT NCE25TD120LT

NCE40TD135LT.

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