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2022-09-23 18:12:25
FDC655BN MOSFET
Specification
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Manufacturer: onsemi
Product Category:MOSFET
RoHS: Details
Technology: Si
Installation style: SMD/SMT
Package/Case: SSOT-6
Transistor Polarity: N-Channel
Number of channels: 1 Channel
Vds-drain-source breakdown voltage: 30 V
Id-Continuous Drain Current: 6.3 A
Rds On-Drain Source On Resistance: 25 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - gate-source threshold voltage: 1 V
Qg-gate charge: 13 nC
Minimum operating temperature:- 55 C
Maximum operating temperature: + 150 C
Pd - Power Dissipation: 1.6 W
Channel Mode:Enhancement
Brand Name: PowerTrench
Package:Reel
Package:Cut Tape
Package: MouseReel
Trademark: onsemi / Fairchild
Configuration:Single
Fall Time: 4 ns
Forward Transconductance - Min: 20 S
Height: 1.1 mm
Length: 2.9 mm
Product: MOSFET Small Signal
Product Type:MOSFET
Rise time: 4 ns
Series: FDC655BN
Factory Packing Quantity: 3000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Type:MOSFET
Typical turn-off delay time: 22 ns
Typical turn-on delay time: 8 ns
Width: 1.6 mm
Part number alias: FDC655BN_NL
Unit weight: 36 mg