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2022-09-23 18:12:25
FDMS3660S MOSFET
Specification
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Manufacturer: onsemi
Product Category:MOSFET
RoHS: Details
Technology: Si
Installation style: SMD/SMT
Package / Box: Power-56-8
Transistor Polarity: N-Channel
Number of channels: 2 Channel
Vds-drain-source breakdown voltage: 30 V
Id - Continuous drain current: 13 A, 30 A
Rds On-Drain Source On Resistance: 8 mOhms, 1.8 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V, - 12 V, + 12 V
Vgs th - gate-source threshold voltage: 1.1 V
Qg-gate charge: 29 nC, 87 nC
Minimum operating temperature:- 55 C
Maximum operating temperature: + 150 C
Pd - Power Dissipation: 2.2 W, 2.5 W
Channel Mode:Enhancement
Brand Name: Power Stage PowerTrench
Package:Reel
Package:Cut Tape
Package: MouseReel
Trademark: onsemi / Fairchild
Configuration: Dual
Height: 1.1 mm
Length: 6 mm
Product Type:MOSFET
Series: FDMS3660S
Factory Packing Quantity: 3000
Subcategory: MOSFETs
Transistor Type: 2 N-Channel
Width: 5 mm
Unit weight: 171 mg