BYM4875 Introduction

In response to this demand, Xinjie can produce N-channel trench process MOS transistors with small internal resistance and good overcurrent resistance - NCE80H12, the on-resistance of NCE80H12 is less than 6mΩ, the output current can reach 120A, and the motor torque is better , .

According to the carrier of the conduction channel, it can be divided into N channel and P channel. Assuming that the carriers of the conductive channel are electrons, it is called an N-channel; assuming that the carriers are holes, it is called a P-channel. A MOS tube is a semiconductor device in which unipolar carriers participate in conduction.

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BYM4875

Figure four types of MOSFETs and their graphical symbols. . Power MOSFETs are generally rarely used in P-channel. Since the mobility of holes is lower than that of electrons, the on-resistance of P-channel transistors is larger than that of N-channel transistors for the same channel size. According to the two points of the conductive channel and the process of channel formation, MOS tubes can be divided into: P-channel enhancement MOS tubes, P-channel depletion MOS tubes, N-channel enhancement MOS tubes and N-channel depletion MOS tubes .

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. The conductive channel of the MOS tube can be formed during the production process or by turning on an external power supply. When the gate voltage is equal to zero, there is a channel (that is, formed during production), which is called depletion mode. When an external voltage is applied The one that forms the channel later is called the enhancement type.

Barrier capacitance: In power semiconductors, when the N-type and P-type semiconductors are combined, the electrons of the N-type semiconductor will partially diffuse into the holes of the P-type semiconductor due to the concentration difference, so they will form on both sides of the junction surface. Space charge area (the electric field formed by the space charge area will resist the diffusion movement, and finally make the diffusion movement reach equilibrium);

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TPC8A01

On the one hand, the three electrodes of the low-power MOSFET are on one plane, the channel cannot be made very short, and the channel resistance is large. The structure of the MOSFET shown in the figure is not suitable for use in high-power applications for two reasons. On the other hand, the conductive channel is composed of surface induced charges, and the channel current is the surface current. To increase the current capacity, it is necessary to increase the chip area. Such a structure is unlikely to achieve a large current. .

NCE6802 NCE30H29D NCEB301Q NCEB301Q NCEB301G.

The transfer characteristic refers to the relationship curve between the gate voltage UGS and the corresponding drain current ID when the voltage UDS between the drain and the source is at a certain fixed value. Figure 3 shows the handling characteristics of a certain FET. . The characteristics of a MOSFET can be characterized by a transfer characteristic curve and a drain output characteristic curve.

NCE3075Q NCE3015S NCE3400E NCE3065K NCE3095AK.

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The lithium battery of electric vehicles can work normally, largely thanks to the lithium battery protection board.

The battery cell is equivalent to the heart of the lithium battery, and the lithium battery protection board is mainly composed of a protection chip (or management chip), a MOS tube, a resistor, a capacitor, and a PCB board.

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