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2022-09-23 18:12:25
IRLR2705TRPBF Factory Packing Quantity: 2000
Specification
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Manufacturer: Infineon
Product Category:MOSFET
RoHS: Details
Technology: Si
Installation style: SMD/SMT
Package/Case:TO-252-3
Transistor Polarity: N-Channel
Number of channels: 1 Channel
Vds-drain-source breakdown voltage: 55 V
Id-Continuous Drain Current: 28 A
Rds On-drain-source on-resistance: 65 mOhms
Vgs - Gate-Source Voltage: - 16 V, + 16 V
Vgs th - gate-source threshold voltage: 2 V
Qg-gate charge: 16.7 nC
Minimum operating temperature:- 55 C
Maximum operating temperature: + 175 C
Pd - Power Dissipation: 46 W
Channel Mode:Enhancement
Package:Reel
Package:Cut Tape
Package: MouseReel
Trademark: Infineon / IR
Configuration:Single
Fall Time: 29 ns
Forward Transconductance - Min: 11 S
Height: 2.3 mm
Length: 6.5 mm
Product Type:MOSFET
Rise time: 100 ns
Factory Packing Quantity: 2000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Type: HEXFET Power MOSFET
Typical turn-off delay time: 21 ns
Typical turn-on delay time: 8.9 ns
Width: 6.22 mm
Part number alias: IRLR2705TRPBF SP001578864
Unit weight: 330 mg