AD1582ARTZ_AD202KY Introduction

Texas Instruments currently has 15 wafer fabs in 9 countries, of course, these plants include outdated capacity that is about to close, as well as new 300mm capacity. In April 2019, Diodes completed the acquisition of Texas Instruments' 150mm/200mm wafer fab (GFAB) in Greenock, Scotland, UK, as part of TI's strategy to gradually abandon outdated capacity.

Texas Instruments (TI) today introduced an ultra-low power switching regulator TPS62840, its operating quiescent current (IQ) can reach 60nA, only 1/3 of similar devices in the industry. It delivers very high light-load efficiency of 80% at 1-µA loads, enabling designers to extend the battery life of their systems or use fewer or smaller batteries to shrink their overall power solution size and reduce costs. In addition, the new DC/DC converters have a wide input voltage (VIN) range of 1.8V to 6.5V to support a variety of chemistries and configurations.

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So, does this mean that 150mm wafers are gradually withdrawing from the stage of history? The answer is no, there is still a huge market space for 150mm wafers. A large number of 150mm fabs in the industry were closed, and more and more 300mm fabs were launched and gradually achieved mass production.

Flexible VIN broadens application range: The TPS62840 has a wide input voltage range of 1.8VIN-6.5VIN and accepts a variety of chemistries and configurations, such as two lithium-manganese dioxide (2s-LiMnO2) cells in series , single-cell lithium thionyl chloride (1xLiSOCL2) batteries, four- and two-cell alkaline batteries, and lithium polymer batteries (Li-Po).

Vincent Roche, President and CEO of Analog Devices, said: "ADI is committed to enhancing the impact of software development on various industries and, with its unique strengths, bridging the real and digital worlds. We deeply appreciate ISE and others. Such projects are of great significance to help develop future software engineers.”

In order to gain an in-depth understanding of TI's new breakthrough in BAW technology, let's start with the principle of BAW filter: . • In the past, BAW resonator technology has been used to filter signals in communication technologies such as smartphones. For the first time in the industry, TI uses this technology for integrated clock functions.

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In short, advances in BAW technology have brought "higher performance, simpler design, lower cost and smaller size" to wired and wireless networks, Wong explained.

TPS60403DBVR CSD17313Q2 TPS259571DSGR TPS259571DSGT TLV3202AQDGKRQ1.

TPS630701RNMT TPS630702RNMR TPS54218RTER TPS92692PWPR TPS56C230RJER.

The reflector consists of several layers of alternating high and low impedance layers. For example, one layer has a large acoustic wave impedance, the second layer has a small acoustic wave impedance, and the third layer has a large acoustic wave impedance, and the thickness of each layer is λ/4 of the acoustic wave, so that most waves will The reflected back and the original wave are superimposed. The overall effect of this structure is equivalent to contact with air, and most of the sound waves are reflected back. This structure is called BAW-SMR (Solidly Mounted Resonator), as shown below. One way is to form a Bragg reflector under the oscillating structure to reflect sound waves into the piezoelectric layer.

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Design engineers can use this MCU to achieve simpler and smaller designs while improving performance and reducing cost. . Time-to-market is accelerated as designers eliminate the need to screen, calibrate and assemble external quartz crystals. TI's new product announcement includes an industry-first crystalless wireless microprocessor (MCU) that integrates a TI BAW resonator in a package.

The charger can provide a power density of 155 mW/mm2 (100 W/in2), which is about twice higher than the market. The new buck-boost charger helps engineers reduce solution size and bill of materials (BOM) and is TI's first device to fully integrate the following components: switching metal-oxide-semiconductor field-effect transistor (MOSFET), charge path management FETs, input current and charge current sensing circuits, and dual input select drivers. . The reduction in component count is valuable for applications such as smart speakers; and as market adoption increases, the size and cost of these applications continue to shrink.

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