DMG6968UDM-7 Introduction

Low-power mos is a planar structure. The power mos used on electric vehicles is a three-dimensional structure. The mos tube we have seen is actually composed of thousands of small mos tubes in parallel. You may think that one or a few bad moss should easily appear in thousands of small mos. In fact, it is not that easy. , the current manufacturing process basically guarantees the high consistency of various parameters of these small units.

According to the carrier of the conduction channel, it can be divided into N channel and P channel. Assuming that the carriers of the conductive channel are electrons, it is called an N-channel; assuming that the carriers are holes, it is called a P-channel. A MOS tube is a semiconductor device in which unipolar carriers participate in conduction.

AF9926NSLA_MI4822

DMG6968UDM-7

There is parasitic capacitance between the three pins of the MOS tube, which is not what we need, but is caused by the limitation of the manufacturing process.

Working principle of power MOS tube Power MOS tube is developed from low-power MOS tube. However, in terms of structure, there is a big difference between them. In order to better understand the mechanism of power MOSFET, we must first recall the mechanism of low-power FET. . The following describes the principle of the MOS transistor with the structure of an N-channel enhancement type low-power MOSFET.

MOS tube, is the abbreviation of MOSFET. MOSFET Metal-Oxide Semiconductor Field-Effect Transistor, referred to as Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET).

Barrier capacitance: In power semiconductors, when the N-type and P-type semiconductors are combined, the electrons of the N-type semiconductor will partially diffuse into the holes of the P-type semiconductor due to the concentration difference, so they will form on both sides of the junction surface. Space charge area (the electric field formed by the space charge area will resist the diffusion movement, and finally make the diffusion movement reach equilibrium);

AF9926NSLA_MI4822

DMG6968UDM-7

NCE4612SP NCE30H32VD NCE3402 NCE3402A NCE30H21.

The full area (UDS>UGS-UT) guarded in the above three areas is the full area, also known as the constant current area or the amplification area. When the UDS increases to a certain value, the drain PN junction breaks down, the leakage current increases rapidly, and the curve turns upward and enters the breakdown region. . Power MOSFETs are used in power conversions such as switching power supplies and inverters, and they work in two regions, the cut-off region and the breakdown region. The breakdown region is in the region of considerable drain-source voltage UDS, and the drain current is approximately constant.

NCE2060K NCE2090K NCE20H11K NCE20H18 NCE20H20.

NCE6802 NCE30H29D NCEB301Q NCEB301Q NCEB301G.

AF9926NSLA_MI4822

NCE30TD120UT NCE40TD120UT NCE40TD120VT NCE30TD120BP NCE25TD120BT.

In the lithium battery protection board, the most important thing is to protect the chip and MOS tube.

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