MEM8205 Introduction

Their various switching actions are almost the same. Of course, when they burn out, there must be a small tube that can't bear it first. So the stability of the tube is inseparable from the manufacturing process, and poor workmanship may result in the inconsistency of the parameters of these small tubes.

According to the carrier of the conduction channel, it can be divided into N channel and P channel. Assuming that the carriers of the conductive channel are electrons, it is called an N-channel; assuming that the carriers are holes, it is called a P-channel. A MOS tube is a semiconductor device in which unipolar carriers participate in conduction.

AM9926N-T1-PF_MMDFS6N303R2G

MEM8205

There is parasitic capacitance between the three pins of the MOS tube, which is not what we need, but is caused by the limitation of the manufacturing process.

Barrier capacitance: In power semiconductors, when the N-type and P-type semiconductors are combined, the electrons of the N-type semiconductor will partially diffuse into the holes of the P-type semiconductor due to the concentration difference, so they will form on both sides of the junction surface. Space charge area (the electric field formed by the space charge area will resist the diffusion movement, and finally make the diffusion movement reach equilibrium);

NCE30H11K NCE3402B NCE30H10AK NCE2304 NCE3404.

MOS tube is a metal (Metal)-oxide (Oxide)-semiconductor (Semiconductor) field effect transistor, or metal-insulator (Insulator)-semiconductor. .

AM9926N-T1-PF_MMDFS6N303R2G

MEM8205

NCE6802 NCE30H29D NCEB301Q NCEB301Q NCEB301G.

NCE3020K NCE3025Q NCE3035K NCE3025G NCE3030K.

Variable resistance region (UDS In this region, when UDS increases, ID increases linearly. When the conductive channel is close to the pinch off, the growth slows down. When the low UDS separate pinch off voltage is large, the MOS tube is equivalent to a resistor, This resistance decreases with the increase of UGS. Cut-off region (UGS). Figure MOS transistor drain output characteristics The output characteristics of field effect transistors can be divided into four regions: variable resistance region, cut-off region, breakdown region and constant current zone.

For example, electronic fuel injection system, anti-lock brake control, anti-skid control, traction control, electronically controlled suspension, electronically controlled automatic transmission, electronic power steering, etc. The electronic device that can be used independently in the environment has no direct relationship with the performance of the car itself. .

AM9926N-T1-PF_MMDFS6N303R2G

NCE25TD135LT NCE15TD135LT NCE15TD120LP NCE15TD135LP NCE25TD120LP.

The battery cell is equivalent to the heart of the lithium battery, and the lithium battery protection board is mainly composed of a protection chip (or management chip), a MOS tube, a resistor, a capacitor, and a PCB board.