SSS8205 Introduction

When naming the company, the founders incorporated their nostalgia for the past and expectations for the future. A simple name with many untold stories behind it... . Their success today is due to the founders. There are many well-known brands in the electronics industry, each brand is like a person's name, and its origin and naming have its own unique style.

Although high-resolution technology is only just getting started in the audio market, its evolution is already underway. . VentureCraft is a pioneering company in this area, leading the development of high-resolution portable amplifiers, music players and headphone amplifiers, including the popular SounDroid Vantam product line.

AO9926A_NTMD5838NLR2G&Special 30V

SSS8205

NCE3019AS NCE3045G NCE3400AY NCE30ND07S NCE8601B.

Power MOSFETs are generally rarely used in P-channel. Since the mobility of holes is lower than that of electrons, the on-resistance of P-channel transistors is larger than that of N-channel transistors for the same channel size. According to the two points of the conductive channel and the process of channel formation, MOS tubes can be divided into: P-channel enhancement MOS tubes, P-channel depletion MOS tubes, N-channel enhancement MOS tubes and N-channel depletion MOS tubes . . Figure four types of MOSFETs and their graphical symbols.

There is parasitic capacitance between the three pins of the MOS tube, which is not what we need, but is caused by the limitation of the manufacturing process.

There are three parasitic capacitance parameters in the MOS tube specification, namely: input capacitance Ciss, output capacitance Coss, and reverse transfer capacitance Crss. What do the three capacitance parameters represent in the body of the tube? How did it form? .

AO9926A_NTMD5838NLR2G&Special 30V

SSS8205

When the applied forward voltage increases, the concentration of unbalanced minority carriers increases and the concentration gradient also increases, and when the applied voltage decreases, the change is opposite. Diffusion capacitance: When a forward voltage is applied, the non-equilibrium minority carrier concentration near the interface of the depletion layer is high, far from the non-equilibrium minority carrier concentration is low, and the concentration gradually decays from high to 0 until it reaches zero. The process of charge accumulation and release in this phenomenon is the same as that of capacitor charging and discharging, which is called diffusion capacitance.

. The parasitic capacitance structure of the MOS tube is as follows. Among them, the width of polysilicon, the width of the channel and the trench, the thickness of the G oxide layer, and the doping profile of the PN junction are all factors that affect the parasitic capacitance.

For example, electronic fuel injection system, anti-lock brake control, anti-skid control, traction control, electronically controlled suspension, electronically controlled automatic transmission, electronic power steering, etc. The electronic device that can be used independently in the environment has no direct relationship with the performance of the car itself. .

NCE3075Q NCE3015S NCE3400E NCE3065K NCE3095AK.

AO9926A_NTMD5838NLR2G&Special 30V

The main functions of the lithium battery protection board are: 1 overcharge protection, 2 short circuit protection, 3 over current protection, 4 over discharge protection, 5 normal state.

NCE2302D NCE2302F NCE1012E NCE2302B NCE2302.

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