STS8201 Introduction

In simple terms, the motor is driven by the output current of the MOS tube such as NCE80H12. The larger the output current (in order to prevent overcurrent from burning the MOS tube, the controller has limited current protection), the motor torque is strong and the acceleration is powerful, so MOS Tubes play a very important role in electric vehicle controllers.

The above is the specification of the power mos tube NCE80H12. The power mos tube NCE80H12 used in our electric vehicle controller is actually different from the low-power mos structure in the usual cmos integrated circuit.

AO9926B_NTMSD6N303R2G

STS8201

For these two enhanced MOS tubes, NMOS is more commonly used. . As for why not to use depletion-type MOS tubes, it is not recommended to get to the bottom of it.

G: gate gate; S: source source; D: drain drain. Such devices are considered symmetrical. Generally, it is a metal-oxide-semiconductor field effect transistor, or a metal-insulator-semiconductor. The source (source) and drain (depletion layer) of the MOS tube can be reversed, and they are all N-type regions formed in the P-type backgate. In most cases, these two regions are the same, even if the two ends are reversed, it will not affect the performance of the device.

Barrier capacitance: In power semiconductors, when the N-type and P-type semiconductors are combined, the electrons of the N-type semiconductor will partially diffuse into the holes of the P-type semiconductor due to the concentration difference, so they will form on both sides of the junction surface. Space charge area (the electric field formed by the space charge area will resist the diffusion movement, and finally make the diffusion movement reach equilibrium);

NCE3019AS NCE3045G NCE3400AY NCE30ND07S NCE8601B.

AO9926B_NTMSD6N303R2G

STS8201

Variable resistance region (UDS In this region, when UDS increases, ID increases linearly. When the conductive channel is close to the pinch off, the growth slows down. When the low UDS separate pinch off voltage is large, the MOS tube is equivalent to a resistor, This resistance decreases with the increase of UGS. Cut-off region (UGS). Figure MOS transistor drain output characteristics The output characteristics of field effect transistors can be divided into four regions: variable resistance region, cut-off region, breakdown region and constant current zone.

NCE6802 NCE30H29D NCEB301Q NCEB301Q NCEB301G.

NCE4612SP NCE30H32VD NCE3402 NCE3402A NCE30H21.

NCE2060K NCE2090K NCE20H11K NCE20H18 NCE20H20.

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The lithium battery of electric vehicles can work normally, largely thanks to the lithium battery protection board.

In the lithium battery protection board, the most important thing is to protect the chip and MOS tube.

relevant information