AO8814 Introduction

Xinjie, behind this FET NCE80H12, utilizes its own technical advantages to work closely with 8-inch wafer foundries, packaging and testing foundries, and has a complete quality management system to ensure continuous product quality and stable supply.

The size of this internal resistance basically determines how much on-current the MOS tube chip can withstand (of course, it is related to other factors, such as thermal resistance). The resistance of this current path is called the internal resistance of the MOS tube, that is, the on-resistance. The smaller the internal resistance, the larger the current (because the heat is small).

APM7318KC-TRL_SI4330DY-T1-E3

AO8814

NCE3404Y NCE3400A NCE3400 NCE30ND07AS NCE3008N.

Barrier capacitance: In power semiconductors, when the N-type and P-type semiconductors are combined, the electrons of the N-type semiconductor will partially diffuse into the holes of the P-type semiconductor due to the concentration difference, so they will form on both sides of the junction surface. Space charge area (the electric field formed by the space charge area will resist the diffusion movement, and finally make the diffusion movement reach equilibrium);

The reason is that the on-resistance is small and it is easy to manufacture. Therefore, in the application of switching power supply and motor drive, NMOS is generally used.

MOS tube, is the abbreviation of MOSFET. MOSFET Metal-Oxide Semiconductor Field-Effect Transistor, referred to as Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET).

APM7318KC-TRL_SI4330DY-T1-E3

AO8814

Variable resistance region (UDS In this region, when UDS increases, ID increases linearly. When the conductive channel is close to the pinch off, the growth slows down. When the low UDS separate pinch off voltage is large, the MOS tube is equivalent to a resistor, This resistance decreases with the increase of UGS. Cut-off region (UGS). Figure MOS transistor drain output characteristics The output characteristics of field effect transistors can be divided into four regions: variable resistance region, cut-off region, breakdown region and constant current zone.

The structure of the MOSFET shown in the figure is not suitable for use in high-power applications for two reasons. On the one hand, the three electrodes of the low-power MOSFET are on one plane, the channel cannot be made very short, and the channel resistance is large. On the other hand, the conductive channel is composed of surface induced charges, and the channel current is the surface current. To increase the current capacity, it is necessary to increase the chip area. Such a structure is unlikely to achieve a large current. .

The full area (UDS>UGS-UT) guarded in the above three areas is the full area, also known as the constant current area or the amplification area. When the UDS increases to a certain value, the drain PN junction breaks down, the leakage current increases rapidly, and the curve turns upward and enters the breakdown region. . Power MOSFETs are used in power conversions such as switching power supplies and inverters, and they work in two regions, the cut-off region and the breakdown region. The breakdown region is in the region of considerable drain-source voltage UDS, and the drain current is approximately constant.

. The parasitic capacitance structure of the MOS tube is as follows. Among them, the width of polysilicon, the width of the channel and the trench, the thickness of the G oxide layer, and the doping profile of the PN junction are all factors that affect the parasitic capacitance.

APM7318KC-TRL_SI4330DY-T1-E3

The lithium battery of electric vehicles can work normally, largely thanks to the lithium battery protection board.

NCE25TD120WT NCE25TD120VT NCE15TD120LT NCE25TD120LT NCE40TD135LT.

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