STS8816 Introduction

The core of power semiconductors is the PN junction. From diodes, triodes to field effect transistors, various applications are made according to the characteristics of the PN junction. According to whether the inversion layer exists in the case of no electricity, MOS tubes can be divided into enhancement type and depletion type. Field effect transistors are divided into junction type and insulated gate type, among which the insulated gate type is also called MOS tube (Metal Oxide Semiconductor).

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AP9926EM-A_PHKD13N03LT

STS8816

In most cases, these two regions are the same, even if the two ends are reversed, it will not affect the performance of the device. Such devices are considered symmetrical. The Source and Drain of the MOS tube can be reversed, and they are all N-type regions formed in the P-type Backgate.

NCE3019AS NCE3045G NCE3400AY NCE30ND07S NCE8601B.

MOS tube 3306 product features 1. RDS(on)=7mΩ@VGS=10V 2. Lead-free green equipment 3. Low resistance switch to reduce conduction loss 4. High avalanche current.

MOS tube is a metal (Metal)-oxide (Oxide)-semiconductor (Semiconductor) field effect transistor, or metal-insulator (Insulator)-semiconductor. .

AP9926EM-A_PHKD13N03LT

STS8816

MOSFET is a type of FET (the other is JFET), which can be made into enhancement mode or depletion mode, P-channel or N-channel, a total of 4 types, but only the enhancement-mode N-channel MOS is actually used. Tube model and enhanced P-channel MOS tube model, so NMOS is usually mentioned, or PMOS refers to these two.

NCE4612SP NCE30H32VD NCE3402 NCE3402A NCE30H21.

NCE6802 NCE30H29D NCEB301Q NCEB301Q NCEB301G.

NCE3075Q NCE3015S NCE3400E NCE3065K NCE3095AK.

AP9926EM-A_PHKD13N03LT

NCE25TD135LP NCE1608N NCE18ND11U NCE3134 NCE20ND07U.

NCE2302C NCE8205t NCE2004Y NCE2006Y NCE2007NS.

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