AD11/2016-0REEL_AD1937WBSTZ-R Introduction

In April 2019, Diodes completed the acquisition of Texas Instruments' 150mm/200mm wafer fab (GFAB) in Greenock, Scotland, UK, as part of TI's strategy to gradually abandon outdated capacity. Texas Instruments currently has 15 wafer fabs in 9 countries, of course, these plants include outdated capacity that is about to close, as well as new 300mm capacity.

. According to IC Insights statistics, in the past 10 years (2009-2018), all 11-ball semiconductor manufacturers closed or rebuilt a total of 97 fabs. The details are shown in the figure below. Among them, 42 150mm fabs and 24 200mm fabs were closed, while the number of closed 300mm fabs accounted for only 10% of the total.

AD11/2016-0REEL_AD1937WBSTZ-R

AD1582ART-RL7

AD1385KD AD1403AN AD1403N AD1403N AD15/112.

AD1021AARQZ AD1021AARQZ AD1021ARQ AD1021RQ AD1021RQ.

AD1580BKSZ-REEL7 AD1580BRT AD1580BRT-R2 AD1580BRT-REEL7 AD1580BRT-REEL7.

AD1380KD AD1380KD AD1380KD/JD AD1382KD AD1382KD AD1385JD.

AD11/2016-0REEL_AD1937WBSTZ-R

AD4075-2ARZ

AD1032AR AD1032AR AD1032AR AD1032AR AD1062KN.

AD1582ART-RL AD1582ART-RL7 AD1582ARTZ AD1582ARTZ AD1582ARTZ-REEL7.

AD1584ART-RELL7 AD1584ARTZ AD1584ARTZ AD1584ARTZ-R2 AD1584ARTZ-REEL7.

AD1022A1RQ AD1022A1RQ AD1022A2RQ AD1022A2RQ AD1022ARQ.

AD11/2016-0REEL_AD1937WBSTZ-R

However, the thin film structure needs to be strong enough to be unaffected by subsequent processes. Compared with BAW-SMR, a smaller part of the membrane type is in contact with the underlying substrate, which is not easy to dissipate heat.

?? Because only the edge part is in contact with the underlying substrate, this structure is relatively fragile when under pressure, and similar to the membrane type, the heat dissipation problem also needs attention. In the Airgap type, an auxiliary layer (sacrificial support layer) is deposited before the piezoelectric layer is formed, and finally the auxiliary layer is removed to form an air gap under the oscillating structure.

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