HUF76645S3S_P2103HVG Introduction

The above is the specification of the power mos tube NCE80H12. The power mos tube NCE80H12 used in our electric vehicle controller is actually different from the low-power mos structure in the usual cmos integrated circuit.

In addition to the above-mentioned NCE80H12 suitable for electric vehicle controllers, Nanshan Electronics also provides Fenghua resistance-capacitance sense, long-crystal MOS transistors, Epson active and passive crystal oscillators, etc.

HUF76645S3S_P2103HVG

FDS6679-NL

FDS8928-NL FDS8958A-NL FDS8958B-NL FDS8958-NL FDS8960C-NL.

FDU044AN03L FDU068AN03L FDU6644 FDU6676AS FDU6682.

FDS4559-NL FDS4895C-NL FDS4895-NL FDS4897AC-NL FDS4897C-NL & Special 40V.

FDW2601NZ FDS6900AS-NL FDS6900-NL FDS6900S-NL 2N7002DW-7-F.

HUF76645S3S_P2103HVG

N4031SD

FDS6930A-NL FDS6930B-NL FDS6961A-NL FDS8926A-NL FDS8984-NL.

FDS6982-NL FDS6990-NL FDS4936-NL FDS6912A-NL FDS6912-NL.

FDFS6N303-NL FDFS6N548-NL FDFS6N754-NL FDS6910-NL FDS6982AS-NL.

FDS9926A-NL FDS9926-NL RF1K49090 FDW2501NZ FDW9926A.

HUF76645S3S_P2103HVG

NCE25TD135LP NCE1608N NCE18ND11U NCE3134 NCE20ND07U.

The performance parameters of NCE3401 are still good, suitable for load switching or pulse width modulation applications, and the impedance value is relatively low, and the new clean energy MOS tube has the characteristic process technology of shielded gate power and super junction power MOSFET. The parameter performance and sample delivery performance can be almost the same as foreign MOS tubes, such as the same used in lithium battery protection boards, NCE3401, AO3401, IRLML5203TR, DMP3098L-7, I think the functions can be satisfied in comparison, and the price is moderate NCE3401 is more suitable.

relevant information