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2022-09-23 17:22:28
TAJE158K002RNJ
TAJE158K002RNJ_TAJE158K002RNJ Introduction
In addition to the above-mentioned NCE80H12 suitable for electric vehicle controllers, it also provides Fenghua resistance-capacitance sense, long-crystal two-transistor MOS transistors, Epson active and passive crystal oscillators, etc.
TAJE158K002RNJ_TAJE158K002RNJ
TAJD106M050RNJ
AO4832 AO4838 CEM3138 DMG4800LSD-13 EMB17A03G FDS6982-NL.
040N06N 042N03L 042N03MS 043N03MS 045N10N.
SP8K4-TB SPN4972S8RG SQ4282EY-T1-GE3 STN4972 STS8DN3LLH5.
Q1 and Q2 form an inverted totem pole to achieve isolation and ensure that the two drive transistors Q3 and Q4 are not turned on at the same time.
TAJE158K002RNJ_TAJE158K002RNJ
TAJD337M004RNJ
The source and drain of the MOS tube can be reversed, and they are all N-type regions formed in the P-type backgate. In most cases, these two regions are the same, even if the two ends are reversed, it will not affect the performance of the device, such a device is considered to be symmetrical.
0603180R5%_06031M5%_06032.2K5%_0603220R5%_060322K5%_.
BYP336 BYT337 BYS334 BYS345 BYP346.
BYM3312 BYM3312-X BYF333 BYP332 BYS332.
TAJE158K002RNJ_TAJE158K002RNJ
NCE2302D NCE2302F NCE1012E NCE2302B NCE2302.
relevant information