TAJE158K004RNJ_TAJE158K004RNJ Introduction

In addition to the above-mentioned NCE80H12 suitable for electric vehicle controllers, it also provides Fenghua resistance-capacitance sense, long-crystal two-transistor MOS transistors, Epson active and passive crystal oscillators, etc.

TAJE158K004RNJ_TAJE158K004RNJ

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When necessary, an accelerating capacitor can be connected in parallel with R4. R1 provides the base current limit for Q3 and Q4, and R4 provides the gate current limit for the MOS tube, that is, the Ice limit of Q3 and Q4. .

Q1 and Q2 form an inverted totem pole to achieve isolation and ensure that the two drive transistors Q3 and Q4 are not turned on at the same time.

TAJE158K004RNJ_TAJE158K004RNJ

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FETs affect the current flowing through the transistor by projecting an electric field on an insulating layer. In fact no current flows through this insulator, so the gate current of the FET is very small. The most common FET uses a thin layer of silicon dioxide as the insulator under the GATE.

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Because MOS tubes are smaller and more power efficient, they have replaced bipolar transistors in many applications. . Such transistors are called metal-oxide-semiconductor (MOS) transistors, or metal-oxide-semiconductor field effect transistors (MOSFETs).

The common ones on the market are generally N-channel and P-channel, and the common P-channel is a low-voltage MOS tube. The gain of a FET is equal to its transconductance, defined as the ratio of the change in output current to the change in input voltage.

TAJE158K004RNJ_TAJE158K004RNJ

The switch has only two states, on and off, and the transistor and MOS tube work in three states, 1, cut-off, 2, linear amplification, 3, saturation (the base current continues to increase and the collector current does not increase).

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