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2022-09-23 17:22:28
TAJE158M002RNJ
TAJE158M002RNJ_TAJE158M002RNJ Introduction
Xinjie, behind this FET NCE80H12, utilizes its own technical advantages to work closely with 8-inch wafer foundries, packaging and testing foundries, and has a complete quality management system to ensure continuous product quality and stable supply.
TAJE158M002RNJ_TAJE158M002RNJ
TAJE226M035RNJ
STC5NF20V STG8205 STG8810 STN8205AAST8RG TM8205FC.
SP8K4-TB SPN4972S8RG SQ4282EY-T1-GE3 STN4972 STS8DN3LLH5.
BYP35066A BYP35014A BYF35526A BYP36078A BYI362.
057N08N 057N08NS 05852- 06000,, 06031.5K5%_.
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TAJB226K020RNJ
BYP342-X BYJ3411 BYH3413 BYH345 BYJ345.
BYP32028 BYS32010 BYJ32027A BYH326 BYH323.
FETs affect the current flowing through the transistor by projecting an electric field on an insulating layer. In fact no current flows through this insulator, so the gate current of the FET is very small. The most common FET uses a thin layer of silicon dioxide as the insulator under the GATE.
The common ones on the market are generally N-channel and P-channel, and the common P-channel is a low-voltage MOS tube. The gain of a FET is equal to its transconductance, defined as the ratio of the change in output current to the change in input voltage.
TAJE158M002RNJ_TAJE158M002RNJ
NCE2302D NCE2302F NCE1012E NCE2302B NCE2302.
relevant information