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2022-09-23 17:22:28
IPD25N06S4L-30 Chinese Product Information Function Description
product attribute attribute value
Manufacturer: Infineon
Product Category: MOSFET
RoHS: Details
Technology: Si
Installation style: SMD/SMT
Package/Case: TO-252-3
Transistor Polarity: N-Channel
Number of channels: 1 Channel
Vds-drain-source breakdown voltage: 60 V
Id - Continuous Drain Current: 25 A
Rds On-Drain Source On Resistance: 23 mOhms
Vgs - Gate-Source Voltage: -16 V, +16 V
Vgs th - gate-source threshold voltage: 1.2 V
Qg - Gate charge: 16.3 nC
Minimum operating temperature: - 55 C
Maximum operating temperature: + 175 C
Pd - Power Dissipation: 29 W
Channel Mode: Enhancement
Brand name: OptiMOS
Package: Reel
Package: Cut Tape
Package: MouseReel
Trademark: Infineon Technologies
Configuration: Single
Fall Time: 2 ns
Height: 2.3 mm
Length: 6.5 mm
Product Type: MOSFET
Rise time: 1 ns
Series: OptiMOS-T2
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical turn-off delay time: 15 ns
Typical turn-on delay time: 6 ns
Width: 6.22 mm
Part number alias: IPD25N6S4L3XT SP000481508 IPD25N06S4L30ATMA1
Unit weight: 330 mg