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2022-09-23 17:22:28
IPB036N12N3GATMA1
ManufacturerInfineon Technologies
FET type N channel
Technology MOSFET (Metal Oxide)
Drain-source voltage (Vdss) 120 V
Current at 25°C - Continuous Drain (Id) 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
On-resistance (max) at different Id, Vgs 3.6 milliohms @ 100A, 10V
Vgs(th) (max) at different Id 4V @ 270μA
Gate charge at different Vgs? (Qg) (max) 211 nC @ 10 V
Vgs (max) ±20V
Input Capacitance (Ciss) at Vds (Maximum) 13800 pF @ 60 V
Power Dissipation (Maximum) 300W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Type
Device package PG-TO263-7
Package/Case TO-263-7, D2Pak (6 leads + tabs)