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2022-09-23 17:22:28
ESD9B5.0ST5G Chinese Product Information Function Description
parameter name parameter value
Source Content uidESD9B5.0ST5G
Brand_NameON Semiconductor
Whether lead-free, lead-free or lead-free
Lifecycle Active
Objectid1647646483
Packing Instructions R-PDSO-F2
Number of stitches 2
Manufacturer Packing Code 514AB
Reach Compliance Codecompliant
ECCN code EAR99
HTS code 8541.10.00.50
Factory Lead Time66 weeks
Risk level 1.45
Samacsys DescriptionON SEMICONDUCTOR - ESD9B5.0ST5G - DIODE, TVS, 5V, SOD-923
Samacsys Manufactureronsemi
Other features LOW CAPACITANCE, EXCELLENT CLAMPING CAPABILITY
Maximum breakdown voltage 7.8 V
Minimum breakdown voltage 5.8 V
Breakdown voltage nominal 6.8 V
Maximum clamping voltage 12.5 V
Configure SINGLE
Diode element material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-F2
JESD-609 code e3
Moisture Sensitivity Level 1
Number of components 1
Number of terminals 2
Maximum operating temperature 150 °C
Minimum operating temperature -55 °C
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260
PolarityUNIDIRECTIONAL
Maximum power dissipation 0.3 W
Certification StatusNot Qualified
Reference standard IEC-61000-4-2, 4-4
Maximum repetitive peak reverse voltage 5 V
Subcategory Transient Suppressors
Surface MountYES
Technology Avalanche
Terminal Surface Matte Tin (Sn) - annealed
Terminal form FLAT
Terminal position DUAL
Maximum time at peak reflow temperature 40