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2022-09-23 17:22:28
HGT1S10N120BNST Chinese Product Information Function Description
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Manufacturer: onsemi
Product Category: IGBT Transistor
RoHS: Details
Technology: Si
Package/ Box: SC-70-3
Installation style: SMD/SMT
Configuration:Single
Collector-emitter maximum voltage VCEO: 1200 V
Collector-emitter saturation voltage: 2.7 V
Gate/Emitter Maximum Voltage: 20 V
Continuous collector current at 25 C: 35 A
Pd - Power Dissipation: 298 W
Minimum operating temperature:- 55 C
Maximum operating temperature: + 150 C
Series: HGT1S10N120BNS
Package:Reel
Package:Cut Tape
Package: MouseReel
Trademark: onsemi / Fairchild
Collector Continuous Current: 55 A
Collector maximum continuous current Ic: 35 A
Gate-Emitter Leakage Current: +/- 250 nA
Height: 4.83 mm
Length: 10.67 mm
Product Type: IGBT Transistors
Subcategory: IGBTs
Width: 9.65 mm
Unit weight: 1.312 g