Package Tape & Reel (TR)

Mounting Type Surface Mount

Current - Continuous Drain (Id ) @ 25 °C 34A (Ta), 100A (Tc)

Vgs(th) (max) @Id1.65V @250µA

Drain to source voltage (Vdss) 30V

Standard Package 2,500

Vendor Device Package 8-VSON (5x6)

On-state Rds (max) @ Id, V GS1.4 mOhm @ 40A, 10V

FET Type MOSFET N-Channel, Metal Oxide

Power - 3.1W max

Package/Enclosure 8-TDFN Exposed Pad

Input Capacitor (Ciss) @ VDS7020pF @ 15V

Gate Charge (Qg) @ VGS39nC @ 4.5V

Other name 296-35726-1

RoHS Directive Lead free / RoHS Compliant

Installation style SMD/SMT

Configuring Dual Dual Drain

Transistor Polarity N-Channel

Minimum Operating Temperature - 55 C

Source breakdown voltage 20 V

Continuous drain current 100 A

Series CSD17556Q5B

RDS(ON) 1.5 mOhms

Power dissipation 3.1 W

Trade name NexFET

Forward Transconductance - Min 197 S

Gate charge Qg30 nC

Typical turn-off delay time 27 ns

Rise time 26 ns

Maximum operating temperature + 150 C

Drain-source breakdown voltage 30 V

RoHSRoHS Compliant

Fall time 12 ns

Current - Continuous Drain (Id ) @ 25 °C 34A (Ta), 100A (Tc)

StatusACTIVE

Temp (oC)-55 to 150

Package | PinsVSON-CLIP (DNK) | 8

Device MarkingView

Package QTY | Carrier2500 | LARGE T&R

QGD Typ6.9

ID, Continuous Drain Current at Ta=25degC34

VDS30

New Flag

Functional Diagramfbd_slps392b.gif

VGS20

ID, Package limited100

VGSTH Typ1.4

Rds(on) Max at VGS=45V1.8

Reference Design

Rds(on) Max at VGS=10V1.4

Logic LevelYes

Packaging SON5x6

DatasheetSLPS392B

RDS(on) Typ at VGS=45V1.5

IDM, Max Pulsed Drain Current400

RatingCatalog

TI Design

ID, Silicon limited at Tc=25degC215

QG Typ28.5

RDS(on) Typ at VGS=25V

Mounting Type Surface Mount

Transistor material Si

Category Power MOSFET

Length 6.1mm

Typical Input Capacitance Value @Vds5400 pF @ 15 V

Channel mode enhancements

Height 1.05mm

Number of components per chip 1

Maximum drain-source resistance value 1.8 mΩ

Maximum gate threshold voltage 1.65V

Board Level ComponentsY

Maximum operating temperature +150 °C

Channel TypeN

Minimum operating temperature -55 °C

Maximum power dissipation 3.1 W

Maximum gate-source voltage ±20 V

Width 5.1mm

Dimensions 6.1 x 5.1 x 1.05mm

Minimum gate threshold voltage 1.15V

Maximum drain-source voltage 30 V

Typical on-delay time 14 ns

Typical turn-off delay time 27 ns

Package type VSON

Maximum continuous drain current 215 A

Number of pins 8

Transistor Configuration Sheet

Typical gate charge @Vgs30 nC @ 4.5 V

Factory packing quantity 2500