IXTT16N10D2

  • 2022-09-23 17:22:28

IXTT16N10D2

Manufacturer: IXYS

Product Type:MOSFET

RoHS: Details

Technology: Si

Installation style: SMD/SMT

Package/Case: TO-268-3

Transistor Polarity: N-Channel

Number of channels: 1 Channel

Vds - Drain-Source Breakdown Voltage: 100 V

Id - C continuous drain current: 16 A

Rds On - Drain-Source Resistance: 64 mOhms

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Vgs th - gate-source threshold voltage: 4.5 V

Qg - Gate Charge: 225 nC

Minimum operating temperature:- 55 C

Maximum operating temperature: + 175 C

Pd - Power consumption: 830 W

Channel Mode:Depletion

Package:Tube

Brand: IXYS

Configuration:Single

Fall Time: 70 ns

Mutual Conductance - Min: 7 S

Product Type:MOSFET

Rise time: 43 ns

Series: IXTT16N10

Original packaging quantity: 30

Subcategory: MOSFETs

Transistor Type: 1 N-Channel

Standard off-delay time: 340 ns

Standard turn-on delay time: 45 ns

Weight per piece: 6.500 g