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2022-09-23 17:22:28
IXTT16N10D2
Manufacturer: IXYS
Product Type:MOSFET
RoHS: Details
Technology: Si
Installation style: SMD/SMT
Package/Case: TO-268-3
Transistor Polarity: N-Channel
Number of channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - C continuous drain current: 16 A
Rds On - Drain-Source Resistance: 64 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - gate-source threshold voltage: 4.5 V
Qg - Gate Charge: 225 nC
Minimum operating temperature:- 55 C
Maximum operating temperature: + 175 C
Pd - Power consumption: 830 W
Channel Mode:Depletion
Package:Tube
Brand: IXYS
Configuration:Single
Fall Time: 70 ns
Mutual Conductance - Min: 7 S
Product Type:MOSFET
Rise time: 43 ns
Series: IXTT16N10
Original packaging quantity: 30
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Standard off-delay time: 340 ns
Standard turn-on delay time: 45 ns
Weight per piece: 6.500 g