BUK9E1R9-40E,127 product parameter description Price & Stock

BUK9E1R9-40E,127 product parameter description

BUK9E1R9-40E parameter name property value

Brand_NameNXP Semiconductor

Whether Rohs certification meets

Parts Packaging Code TO-262

Packing InstructionsIN-LINE, R-PSIP-T3

stitch number 3

Manufacturer Packaging Code SOT226

Reach Compliance Codenot_compliant

Other features AVALANCHE RATED

Avalanche Energy Efficiency Rating (Eas) 1008 mJ

Shell connection DRAIN

CONFIGURATION SINGLE WITH BUILT-IN DIODE

Minimum drain-source breakdown voltage 40 V

Maximum drain current (Abs) (ID) 120 A

Maximum drain current (ID) 120 A

Maximum drain-source on-resistance 0.00193 Ω

FET Technology METAL-OXIDE SEMICONDUCTOR

JEDEC-95 code TO-262AA

JESD-30 Code R-PSIP-T3

JESD-609 code e3

Number of components 1

Number of terminals 3

Working modeENHANCEMENT MODE

Maximum operating temperature 175 °C

Package body material PLASTIC/EPOXY

Package shape RECTANGULAR

Package form IN-LINE

Polarity/Channel Type N-CHANNEL

Maximum power dissipation (Abs) 349 W

Maximum pulsed drain current (IDM) 1228 A

Reference Standard AEC-Q101;_IEC-60134

Surface Mount NO

Terminal Surface Tin (Sn)

Terminal form THROUGH-HOLE

Terminal position SINGLE

Transistor Application SWITCHING

Transistor element material SILICON