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2022-09-23 17:22:28
BUK761R4-30E,118 product parameter description
parameter name property value
Brand_NameNXP Semiconductor
Whether Rohs certification meets
Parts Packaging Code D2PAK
Packing InstructionsSMALL OUTLINE, R-PSSO-G2
stitch number 3
Manufacturer Packing Code SOT404
Reach Compliance Codenot_compliant
Other features AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas) 1096 mJ
Shell connection DRAIN
CONFIGURATION SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V
Maximum drain current (Abs) (ID) 120 A
Maximum drain current (ID) 120 A
Maximum drain-source on-resistance 0.00145 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 code e3
Moisture Sensitivity Level 1
Number of components 1
Number of terminals 2
Working modeENHANCEMENT MODE
Maximum operating temperature 175 °C
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Maximum power dissipation (Abs) 324 W
Maximum pulsed drain current (IDM) 1425 A
Reference Standard AEC-Q101;_IEC-60134
Surface MountYES
Terminal Surface Tin (Sn)
Terminal form GULL WING
Terminal position SINGLE
Transistor Application SWITCHING
Transistor element material SILICON