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2022-09-23 17:22:28
934064226118 Product parameter description
parameter name property value
Packing InstructionsSMALL OUTLINE, R-PSSO-G2
Reach Compliance Codeunknown
ECCN code EAR99
Avalanche Energy Efficiency Rating (Eas) 523 mJ
Shell connection DRAIN
CONFIGURATION SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 75 V
Maximum drain current (ID) 120 A
Maximum drain-source on-resistance 0.0058 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
Number of components 1
Number of terminals 2
Working modeENHANCEMENT MODE
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Maximum pulsed drain current (IDM) 713 A
Surface MountYES
Terminal form GULL WING
Terminal position SINGLE
Transistor Application SWITCHING
Transistor element material SILICON