-
2022-09-23 17:22:28
VNP5N07E
Product Category:MOSFET
RoHS: Details
Technology: Si
Installation style: Through Hole
Package/Case:TO-220-3
Transistor Polarity: N-Channel
Number of channels: 1 Channel
Vds-drain-source breakdown voltage: 70 V
Id-Continuous Drain Current: 5 A
Rds On-drain-source on-resistance: 200 mOhms
Vgs - Gate-Source Voltage:-
Vgs th - gate-source threshold voltage: 3 V
Qg-gate charge: 18 nC
Minimum operating temperature:- 55 C
Maximum operating temperature: + 150 C
Pd - Power Dissipation: 31 W
Channel Mode:Enhancement
Qualification: AEC-Q101
Package:Tube
Trademark: STMicroelectronics
Configuration:Single
Fall Time: 40 ns, 1100 ns
Forward Transconductance - Min: 4 S
Product Type:MOSFET
Rise time: 60 ns, 400 ns
Series: VNP5N07
1000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel OMNIFET Power MOSFET
Type:Power MOSFET
Typical turn-off delay time: 150 ns, 3900 ns
Typical turn-on delay time: 50 ns, 150 ns
Unit weight: 2 g