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2022-09-23 17:22:28
VBE2104N
VBE2104N, TO-252, P-Channel 100 V (DS) MOSFET
FEATURES
? Halogen-free According to IEC 61249-2-21
Definition
? TrenchFET Power MOSFET
? Package with Low Thermal Resistance
? 100 %_Rg and_UIS Tested
? Compliant to RoHS Directive 2002/95/EC
Notes
a. Package limited.
b. Pulse test;_pulse width ￡ 300 μs, duty cycle ￡ 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
PRODUCT SUMMARY
VDS (V) - 100
RDS(on) (W) at VGS = - 10 V 0.033
RDS(on) (W) at VGS = - 4.5 V 0.036
ID (A) - 40
Configuration Single
S
G
D
P-Channel MOSFETs
TO-252
GDS
Top View
Drain Connected to Tab
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS - 100
V
Gate-Source Voltage VGS ± 20
Continuous Drain Current
TC = 25°C
ID
- 40
A
TC = 125 °C - 22
Continuous Source Current (Diode Conduction)a IS - 50
Pulsed Drain Currentb IDM - 150
Single Pulse Avalanche Current L = 0.1 mH
IAS-44
Single Pulse Avalanche Energy EAS 96 mJ
Maximum Power Dissipationb TC = 25 °C
PD
136
W
TC = 125 °C 45
Operating Junction and_Storage Temperature Range TJ, Tstg - 55 to + 175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mountc RthJA 50
°C/W
Junction-to-Case (Drain) RthJC 1.1
V