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2022-09-24 17:19:13
Agent CSD19538Q3A imported original spot
Datasheet CSD19538Q3A Datasheet;_Standard Package 2,500
Packaging standard tape and reel
Active Part Status
Category Discrete Semiconductor Products
Product Family Transistor - FET, MOSFET - Single
Series NexFET?
Other name 296-44352-2
CSD19538Q3A-ND
Specification
FET type N channel
Technology MOSFET (Metal Oxide)
Drain-source voltage (Vdss) 100V
Current at 25°C - Continuous Drain (Id) 15A (Ta)
Driving voltage (Max Rds On, Min Rds On) 6V, 10V
On-resistance (max) 59 milliohms @ 5A, 10V at different Id, Vgs
Vgs(th) (max) 3.8V @ 250μA at different Ids
Gate charge (Qg) (max) 4.3nC @ 10V at different Vgs
Vgs (max) ±20V
Input Capacitance (Ciss) (max) 454pF @ 50V at different Vds
FET function-
Power Dissipation (Max) 2.8W (Ta), 23W (Tc)
Operating temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Type
Vendor Device Package 8-VSONP (3x3.15)
Package/Enclosure 8-PowerVDFN