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2022-09-24 17:19:13
BFU730F115
Product Attribute Attribute Value Search Similar
Manufacturer: NXP
Product Category: RF Bipolar Transistor
RoHS: Details
Transistor Type: Bipolar
Technology: Silicon Germanium
DC collector/base gain hfe min: 205
Collector-Emitter Voltage VCEO Max: 2.8V
Emitter-Base Voltage VEBO: 1V
Collector Continuous Current: 5mA
Installation method: patch / patch
Packing/Carton: SOT343F-4
Packaging: cut tape
Packaging: MouseReel
Packaging: Reels
Collector-Base Voltage VCBO: 10V
DC current gain hFE Max: 555
Height: 0.75mm
Length: 2.2mm
Operating frequency: 55 GHz
Type: RF Silicon Germanium
Width: 1.35mm
Brand: NXP Semiconductors
Palladium - Power consumption: 197 MW
Product Category: RF Bipolar Transistor
Factory Packing Quantity: 3000
Subcategory: Transistor
Part Number Alias: 934064614115
Unit weight: 6.665 mg