BF862215

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Manufacturer: NXP

Product Category: RF Junction Gate Field Effect Transistor (RF JFET) Transistor

RoHS: Details

Transistor Type: JFET

Technology: Si

Transistor Polarity: N-Channel

Vds-drain-source breakdown voltage: 20 V

Vgs - Gate Source Breakdown Voltage: - 20 V

Id-Continuous Drain Current: 40 mA

Maximum drain/gate voltage: 20 V

Pd - Power Dissipation: 300 mW

Installation style: SMD/SMT

Package/ Box: SOT-23

Package:Cut Tape

Package: MouseReel

Package:Reel

Configuration:Single

Product: RF JFET

Type: JFET

Trademark: NXP Semiconductors

Product Type: RF JFET Transistors

Rds On-Drain Source On Resistance:-

Factory Packing Quantity: 3000

Subcategory: Transistors

Part number alias: 934055519215

Unit weight: 8 mg

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