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2022-09-24 17:19:13
Agent CSD23202W10 imported original spot
Data List CSD23202W10;_Standard Package 3,000
Packaging standard tape and reel
Active Part Status
Category Discrete Semiconductor Products
Product Family Transistor - FET, MOSFET - Single
Series NexFET?
Other name 296-40000-2
CSD23202W10-ND
Specification
FET type P channel
Technology MOSFET (Metal Oxide)
Drain-source voltage (Vdss) 12V
Current at 25°C - Continuous Drain (Id) 2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
On-resistance (max) 53 milliohms @ 500mA, 4.5V at different Id, Vgs
Vgs(th) (max) 900mV @ 250μA at different Id
Gate charge (Qg) (max) 3.8nC @ 4.5V at different Vgs
Vgs (max) -6V
Input capacitance (Ciss) (max) 512pF @ 6V at different Vds
FET function-
Power Dissipation (Max) 1W (Ta)
Operating temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Type
Vendor Device Package 4-DSBGA (1x1)
Package/Enclosure 4-UFBGA, DSBGA