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2022-09-24 17:19:13
Agent AO4435L/AO4435 imported original spot
Datasheet AO4435 Datasheet;_Standard Package 3,000
Packaging standard tape and reel
Part Status Discontinued
Category Discrete Semiconductor Products
Product Family Transistor - FET, MOSFET - Single
series-
Other name 785-1030-2
AO4435
Specification
FET type P channel
Technology MOSFET (Metal Oxide)
Drain-source voltage (Vdss) 30V
Current at 25°C - Continuous Drain (Id) 10.5A (Ta)
Driving voltage (Max Rds On, Min Rds On) 5V, 20V
On-resistance (max) 14 milliohms @ 11A, 20V at different Id, Vgs
Vgs(th) (max) 3V @ 250μA at different Ids
Gate charge (Qg) (max) 24nC @ 10V at different Vgs
Vgs (max) ±25V
Input Capacitance (Ciss) (max) 1400pF @ 15V at different Vds
FET function-
Power Dissipation (Max) 3.1W (Ta)
Operating temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Type
Supplier Device Package 8-SOIC
Package/Case 8-SOIC (0.154, 3.90mm wide)