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2022-09-24 17:19:13
Agent IPB020N10N5 imported original spot
DATA LIST IPB020N10N5LFATMA1;_STANDARD PACKAGE 1,000
Packaging standard tape and reel
Active Part Status
Category Discrete Semiconductor Products
Product Family Transistor - FET, MOSFET - Single
Series OptiMOS?-5
Other namesIPB020N10N5LFATMA1-ND
IPB020N10N5LFATMA1TR
SP001503854
Specification
FET type N channel
Technology MOSFET (Metal Oxide)
Drain-source voltage (Vdss) 100V
Current at 25°C - Continuous Drain (Id) 120A (Tc)
Driving voltage (Max Rds On, Min Rds On) 10V
On-resistance (max) 2 milliohms @ 100A, 10V at different Id, Vgs
Vgs(th) (max) 4.1V @ 270μA at different Id
Gate charge (Qg) (max) 195nC @ 10V at different Vgs
Vgs (max) ±20V
Input Capacitance (Ciss) (max) 840pF @ 50V at different Vds
FET function-
Power Dissipation (Max) 313W (Tc)
Operating temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Type
Supplier Device Package PG-TO263-3
Package/Case TO-263-3, D2Pak (2-lead + tab), TO-263AB