BCP51-16, 115 product detailed specifications

Standard Package 1,000

Transistor type PNP

- Collector current (Ic) (max) 1A

Voltage - Collector Emitter Breakdown (Max) 45V

Vce Saturation (Max) @ IB, IC500mV @ 50mA, 500mA

Current - Collector Cutoff (Max) -

DC Current Gain (HFE) (min) @ IC, VCE100 @ 150mA, 2V

Power - 1W max

Frequency conversion 145MHz

Mounting Type Surface Mount

Bag/Box TO-261-4, TO-261AA

Supplier Device Package SC-73

Packaging Tape & Reel (TR)

Packaging 4SOT-223

Type PNP

Number of pins 4

Maximum Collector Emitter Voltage 45 V

Collector maximum DC current 1 A

Minimum DC current gain 100@150mA@2V

Maximum operating frequency 145(Typ) MHz

Maximum collector-emitter saturation voltage 0.5@50mA@500mA V

Operating temperature -55 to 150 °C

Maximum power dissipation 1350 mW

Install the Surface Mount

Standard Packaging Tape & Reel

Collector maximum DC current 1

Maximum Transition Frequency145(Typ)

Packing width 3.7(Max)

PCB3

Maximum power dissipation 1350

EU RoHS Directive Compliant

Number of components per chip 1

Maximum Collector Base Voltage 45

Minimum operating temperature -55

Supplier Package Form SC-73

Standard package name SOT-223

Maximum working temperature 150

Packing length 6.7(Max)

Maximum Collector Emitter Voltage 45

Packaging height 1.7(Max)

Maximum base emitter voltage 5

Package Tape and_Reel

Tab Tab

Lead Shape Gull-wing

Current - Collector (Ic) (Max) 1A

Transistor type PNP

Mounting Type Surface Mount

Frequency - Converted 145MHz

Vce Saturation (max) at Ib, Ic conditions 500mV @ 50mA, 500mA

Voltage - Collector Emitter Breakdown (Max) 45V

Supplier Equipment Package SC-73

Power - 1W max

Package/Enclosure TO-261-4, TO-261AA

DC Current Gain (hFE) (min) Ic, 100 @ 150mA at Vce, 2V

RoHS Directive Lead free / RoHS Compliant

Other name568-8011-1

CategoryBipolar Power

Configure Single

Dimensions 1.7 x 6.7 x 3.7mm

Height 1.7mm

Length 6.7mm

Maximum collector base voltage 45 V

Maximum base emitter voltage 5 V

Maximum operating temperature +150 °C

Minimum operating temperature -65 °C

Package Type SC-73

Width 3.7mm

Factory packing quantity 1000

Gain bandwidth product fT145 MHz

Product Category Transistors Bipolar - BJT

Transistor Polarity PNP

Emitter-Base Voltage VEBO5 V

DC collector/gain hfe min 100 at 150 mA at 2 V

DC current gain hFE max 100 at 150 mA at 2 V

Collector-emitter maximum voltage VCEO45 V

Installation style SMD/SMT

Collector-Base Voltage VCBO45 V

Part No. Alias BCP51-16 T/R

RoHSRoHS Compliant

Collector current (DC) (max) 1 A

Collector-Base Voltage 45 V

Collector-emitter voltage 45 V

Emitter-Base Voltage 5 V

Frequency (max) 145 MHz

Power dissipation 1 W

Operating temperature range -65C to 150C

Number of components 1

DC current gain (min) 100

Operating temperature classification Military

AOZ8808DI-05、AOZ1284PI、AOZ1280CI、AOT11N70、AON7934、AON7544、AON7534、AON7524、AON7520、AON7506、AON7423、AON7421、AON7418、AON7410、AON7409、AON7407、AON7405、AON7403、AON7401、AON7296、AON7264E、AON6522、AON6512、AON6508、 AON6504、AON6414AL、AON6262E、AON5820、AON2801、AOD603A、AOD516、AOD484、AOD482、AOD478、AOD444、AOD4185、AOD4184L、AOD4184A、AOD4132、AOD413A、AOD409、AOD417、AOD407、AOD403、AO8822、AO8810、AO3414、AO3402、AO4606、 AO4485、AO4453、AO4447AL、AO4443、AO4468、AO4435、AO4421、AO4419、AO4407AL、AO4406AL、AO4354、AO4292、AO4264E、AO3485、AO3481、AO3480、AO3423、AO3422、AO3416、AO3415AL、AO3415、AO3407A、AO3401A、AO3400A

Pursuit of higher speed: Communication modules will migrate from 2G to 4G, and 5G communication modules will be commercialized soon

At present, the stock IoT devices mainly use 2G communication modules, and the shipment of 4G modules will grow rapidly in the future; Quectel released 5G modules RG500Q and RM500Q based on Qualcomm X55 5G chip in February 2019, which are also the world's first The batch of 5G communication modules is expected to be launched as soon as the end of 2019; StrategyAnalytics predicts that the sales of 4G IoT modules will peak within two years, and the sales of 5G modules will start in 2019 and exceed 4G in 2024. Module sales; it is expected that the domestic market share of 2G modules will drop to 0% in 2023, 4G modules will peak at 33% in 2021, and then begin to decline, and 5G modules will reach 28% in 2025.

Narrowband development accelerates: Internet of Things (NB-IoT) module shipments are expected to accelerate

As a low-power wide area network cellular IoT technology based on licensed frequency bands, NB-IoT is expected to accelerate its development from 2019: First, NB-IoT is most suitable for applications such as indoor three meters, underground pipe networks, and traffic road networks, and these are smart Second, the Ministry of Industry and Information Technology issued the "Notice on Comprehensively Promoting the Construction and Development of Mobile Internet of Things (NB-IoT)" in 2017, and it is planned that in 2020, the number of NB-IoT base stations will reach 1.5 million, and the number of NB-IoT connections will reach 6 100 million. By the end of 2018, there were about 1 million NB-IoT base stations in my country and about 50 million connections, which is still far from the target of the Ministry of Industry and Information Technology. It is expected that in 2019, the three major operators will further improve the construction of NB-IoT networks, and at the same time make efforts to develop NB-IoT users. The measures may include setting indicators and increasing subsidies. It is expected that the domestic market share of NB-IoT and eMTC modules will reach 28% and 15% respectively in 2021.

Hong Kong Xinrui Electronics Co., Ltd. is a professional supplier of integrated circuits and has many years of sales experience in the bank! With a large stock of stock, integrity-based, customer first, the quality of products for customers!

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Company: Hong Kong Xinrui Electronics Co., Ltd.

Contact: Miss Yao

Mobile: 13725590222

Tel: 0755-83780666/83265111

Fax: 0755-82800889

QQ: 3373563833

BCP51-16, 115 product detailed specifications

Standard Package 1,000

Transistor type PNP

- Collector current (Ic) (max) 1A

Voltage - Collector Emitter Breakdown (Max) 45V

Vce Saturation (Max) @ IB, IC500mV @ 50mA, 500mA

Current - Collector Cutoff (Max) -

DC Current Gain (HFE) (min) @ IC, VCE100 @ 150mA, 2V

Power - 1W max

Address: 26B, Block B, Huaqiang Plaza, Futian North Road, Futian District, Shenzhen

Company website: www.xrdz-hk.com