-
2022-09-24 17:19:13
MMBT3904 silkscreen 1AM bipolar junction transistor xjsic SOT23 package original spot
Rated power 200mW
Collector current Ic200mA
Collector-emitter breakdown voltage Vce40V
Transistor type NPN
VCBO collector base voltage 60 V
VCEO collector-emitter voltage 40 V
VEBO emitter base voltage 6 V
IC collector current 200 mA
PC collector power consumption 200 mW
RΘJA thermal resistance from junction to ambient 625°C/W
Tj junction temperature 150℃
Storage temperature -55?+ 150℃
TOPR working temperature 0?+70℃
Collector Base Breakdown Voltage V(BR) CBO IC = 10μA, IE = 0 60 V
Collector-Emitter Breakdown Voltage V(BR) CEO IC = 1mA, IB = 0 40 V
Emitter Base Breakdown Voltage V(BR) EBO IE = 10μA, IC = 0 6 V
Collector cut-off current ICEX VCE = 30V, VEB(off) = 3V 50 nA
Collector cut-off current ICBO VCB = 60V, IE = 0 100 nA
Emitter Cutoff Current IEBO VEB = 5V, IC = 0 100 nA
hFE(1) VCE=1V, IC=10mA 100300
DC current gain hFE(2) VCE = 1V, IC = 50mA 60
hFE(3) VCE = 1V, IC = 100mA 30
Collector-Emitter Saturation Voltage VCE(sat) IC = 50mA, IB = 5mA 0.3 V
Base-Emitter Saturation Voltage VBE(sat) IC = 50mA, IB = 5mA 0.95 V
Transition frequency fT VCE = 20V, IC = 10mA, f = 100MHz 300 MHz
Delay time td
VCC=3V, VBE(off)=-0.5V IC=10mA,
IB1 = 1mA
35 ns
rise time tr
VCC=3V, VBE(off)=-0.5V IC=10mA,
IB1 = 1mA
35 ns
Storage time ts VCC = 3V, IC = 10mA, IB1 = IB2 = 1mA 200 ns
Fall time tf VCC = 3V, IC = 10mA, IB1 = IB2 = 1mA 50 ns