Diode, Inverter/Diode, Inverter

Maximum Ratings/MaximumRatedValues

Reverse repetitive peak voltage

Repetitivepeakreversevoltage Tvj = 25°C VRRM 1200 V

Continuous forward DC current

Continuous DC forward current IF 400 A

Forward repetitive peak current

Repetitive peak forward current tP = 1 ms IFRM 800 A

I2t-value

I2t-value

VR = 0 V, tP = 10 ms, Tvj = 125°C

VR = 0 V, tP = 10 ms, Tvj = 150°C I2t 27000

24500

A2s

A2s

Eigenvalues/CharacteristicValues min.typ.max.

Forward Voltage

Forwardvoltage

IF = 400 A, VGE = 0 V

IF = 400 A, VGE = 0 V

IF = 400 A, VGE = 0 V

VF

1,65

1,65

1,65

2, 10V

V

V

Tvj = 25°C

Tvj = 125°C

Tvj = 150°C

Reverse recovery peak current

Peakreverserecoverycurrent

IF = 400 A, - diF/dt = 9500 A/μs (Tvj=150°C)

VR = 600V

VGE = -15V

IRM

445

535

555

A

A

A

Tvj = 25°C

Tvj = 125°C

Tvj = 150°C

recovery charge

Recoveredcharge

IF = 400 A, - diF/dt = 9500 A/μs (Tvj=150°C)

VR = 600V

VGE = -15V

Qr

43,0

77,0

88,0

μC

μC

μC

Tvj = 25°C

Tvj = 125°C

Tvj = 150°C

Reverse recovery loss (per pulse)

Reverserecoveryenergy

IF = 400 A, - diF/dt = 9500 A/μs (Tvj=150°C)

VR = 600V

VGE = -15V

Erec

21, 5

36, 5

41, 5

mJ

mJ

mJ

Tvj = 25°C

Tvj = 125°C

Tvj = 150°C

Junction-Case Thermal Resistance

Thermalresistance, junctiontocase per diode/perdiode RthJC 0, 103 K/W

Case - heat sink thermal resistance

Thermalresistance, casetoheatsink

per diode/perdiode

λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0，0740 K/W

temperature in switching state

Temperatureunderswitchingconditions Tvj op -40 150 °C